Surface Oxidation Properties in a Topological Insulator Bi2Te3 Film

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	Surface Oxidation Properties in a Topological Insulator Bi2Te3 Film
	GUOJian-Hua QIUFeng ZHANGYun DENGHui-Yong HUGu-Jin LIXiao-Nan YUGuo-Lin DAINing
刊名	CHIN.PHYS.LETT.
	2013
卷号	30 期号:10
英文摘要	Bi2Te3 films are grown on (111)-oriented GaAs substrates by using the hot wall epitaxy method and the surface oxidation properties in the films are investigated by x-ray photoelectron spectroscopy, Raman spectroscopy, and x-ray diffraction. The results show that the films are c-axis oriented. Two pairs of new peaks in the XPS spectra involved with the binding energies from Bi 4f and Te 3d electrons correspond to Bi–O–Te bonds. Besides the A1g1, Eg2 andA1g2 vibration modes from Bi2Te3 films, two new peaks at 93.5 cm−1and 123 cm−1 are observed in Raman spectra, which are assigned to α-Bi2O3 and TeO2, respectively. Our results are helpful for analyzing the degradation mechanism of topological surface states in Bi2Te3.
学科主题	红外基础研究
公开日期	2014-11-10
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/7764]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	GUOJian-Hua QIUFeng ZHANGYun DENGHui-Yong HUGu-Jin LIXiao-Nan YUGuo-Lin DAINing. Surface Oxidation Properties in a Topological Insulator Bi2Te3 Film[J]. CHIN.PHYS.LETT.,2013,30(10).
APA	GUOJian-Hua QIUFeng ZHANGYun DENGHui-Yong HUGu-Jin LIXiao-Nan YUGuo-Lin DAINing.(2013).Surface Oxidation Properties in a Topological Insulator Bi2Te3 Film.CHIN.PHYS.LETT.,30(10).
MLA	GUOJian-Hua QIUFeng ZHANGYun DENGHui-Yong HUGu-Jin LIXiao-Nan YUGuo-Lin DAINing."Surface Oxidation Properties in a Topological Insulator Bi2Te3 Film".CHIN.PHYS.LETT. 30.10(2013).