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A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-μA threshold current and 80-mV SET voltage 期刊论文
Applied Physics A: Materials Science and Processing, 2013, 卷号: 110, 期号: 1, 页码: 173-177
Yingchun Fu, Xiaofeng Wang, Jiayong Zhang, Xiaodong Wang, Chun Chang, Huili Ma, Kaifang Cheng, Xiaogang Chen, Zhitang Song, Songlin Feng, An Ji, Fuhua Yang
收藏  |  浏览/下载：23/0  |  提交时间：2014/05/08
Switching frequency response characteristics of a low cost wireless power driving and controlling system for electrically tunable liquid crystal microlenses 期刊论文
review of scientific instruments, 2011, 卷号: 82, 期号: 1, 页码: article no.14701
Zhang XY; Li H; Liu K; Luo J; Xie CS; Ji A; Zhang TX
收藏  |  浏览/下载：40/5  |  提交时间：2011/07/06
An Ultra Low Power Non-volatile Memory in Standard CMOS Process for Passive RFID Tags 会议论文
the ieee 2009 custom integrated circuits conference, san jose, ca, 2009
Feng P (Feng Peng); Li YL (Li Yunlong); Wu NJ (Wu Nanjian)
收藏  |  浏览/下载：168/36  |  提交时间：2010/04/13
A Fully Integrated 900-MHz Passive RFID Transponder Front End With Novel Zero-Threshold RF-DC Rectifier 期刊论文
ieee transactions on industrial electronics, 2009, 卷号: 56, 期号: 7, 页码: 2317-2325
Yao Y; Wu J; Shi Y; Dai FF
收藏  |  浏览/下载：79/2  |  提交时间：2010/03/08
Compact non-binary fast adders using single-electron devices 期刊论文
microelectronics journal, 2009, 卷号: 40, 期号: 8, 页码: 1244-1254
Zhang WC; Wu NJ
收藏  |  浏览/下载：115/21  |  提交时间：2010/03/08
Effects of indium ion implantation on the total dose hardness of fully depleted SOI NMOSFET 期刊论文
semiconductor science and technology, 2008, 卷号: 23, 期号: 12, 页码: art. no. 125015
Wang, NJ; Li, N; Liu, ZL; Yu, F
收藏  |  浏览/下载：25/0  |  提交时间：2010/03/08
Radiation hardness characteristic of N-implanted and F-implanted SIMOX/NMOSFET 期刊论文
功能材料与器件学报, 2007, 卷号: 13, 期号: 5, 页码: 426-430
作者:  YU Fang
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/23
Compact universal logic gates realized using quantization of current in nanodevices 期刊论文
nanotechnology, 2007, 卷号: 18, 期号: 49, 页码: art. no. 495201
Zhang, WC; Wu, NJ; Yang, FH
收藏  |  浏览/下载：30/0  |  提交时间：2010/03/08
Total Dose Radiation-Hard 0. SOI CMOS Transistors and ASIC 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 10, 页码: 1750-1754
Xiao Zhiqiang; Hong Genshen; Zhang Bo; Liu Zhongli
收藏  |  浏览/下载：23/0  |  提交时间：2010/11/23
Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET 期刊论文
chinese physics, 2005, 卷号: 14, 期号: 3, 页码: 565-570
Zheng ZS; Liu ZL; Zhang GQ; Li N; Fan K; Zhang EX; Yi WB; Chen M; Wang X
收藏  |  浏览/下载：24/0  |  提交时间：2010/03/17

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