Total Dose Radiation-Hard 0. SOI CMOS Transistors and ASIC

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	Total Dose Radiation-Hard 0. SOI CMOS Transistors and ASIC
	Xiao Zhiqiang ; Hong Genshen ; Zhang Bo ; Liu Zhongli
刊名	半导体学报
	2006
卷号	27 期号:10 页码:1750-1754
中文摘要	this paper presents the total dose radiation performance of 0. s^m soi cmos devices fabricated with full dose simox technology. the radiation performance is characterized by threshold voltage shifts and leakage currents of transistors and standby currents of asic as functions of the total dose up to 500krad(si) .the experimental results show that the worst case threshold voltage shifts of front channels are less than 320mv for pmos transistors under off-gate radiation bias at lmrad(si) and less than 120mv for nmos transistors under on-gate radiation bias. no significant radiation-induced leakage current is observed in transistors to lmrad(si). the standby currents of asic are less than the specification of 5μa over the total dose range of 500krad(si).
英文摘要	this paper presents the total dose radiation performance of 0. s^m soi cmos devices fabricated with full dose simox technology. the radiation performance is characterized by threshold voltage shifts and leakage currents of transistors and standby currents of asic as functions of the total dose up to 500krad(si) .the experimental results show that the worst case threshold voltage shifts of front channels are less than 320mv for pmos transistors under off-gate radiation bias at lmrad(si) and less than 120mv for nmos transistors under on-gate radiation bias. no significant radiation-induced leakage current is observed in transistors to lmrad(si). the standby currents of asic are less than the specification of 5μa over the total dose range of 500krad(si).; 于2010-11-23批量导入; zhangdi于2010-11-23 13:02:57导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:02:57z (gmt). no. of bitstreams: 1 4257.pdf: 413720 bytes, checksum: c4fa0cf25f9f4cb74804bd9ed55bb768 (md5) previous issue date: 2006; ic design center, university of electronic science and technology of china;the. 5&th research institute, china electronics technology group corporation;institute of semiconductors, chinese academy of sciences
学科主题	微电子学
收录类别	CSCD
语种	英语
公开日期	2010-11-23 ; 2011-04-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16607]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xiao Zhiqiang,Hong Genshen,Zhang Bo,et al. Total Dose Radiation-Hard 0. SOI CMOS Transistors and ASIC[J]. 半导体学报,2006,27(10):1750-1754.
APA	Xiao Zhiqiang,Hong Genshen,Zhang Bo,&Liu Zhongli.(2006).Total Dose Radiation-Hard 0. SOI CMOS Transistors and ASIC.半导体学报,27(10),1750-1754.
MLA	Xiao Zhiqiang,et al."Total Dose Radiation-Hard 0. SOI CMOS Transistors and ASIC".半导体学报 27.10(2006):1750-1754.