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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：微电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers 期刊论文 journal of semiconductors, 2010, 卷号: 31, 期号: 2, 页码: 99-102 Zheng Zhongshan; Liu Zhongli; Li Ning; Li Guohua; Zhang Enxia 收藏  |  浏览/下载：17/0  |  提交时间：2011/08/16 Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106106 Tang HM (Tang Hai-Ma); Zheng ZS (Zheng Zhong-Shan); Zhang EX (Zhang En-Xia); Yu F (Yu Fang); Li N (Li Ning); Wang NJ (Wang Ning-Juan) 收藏  |  浏览/下载：48/0  |  提交时间：2010/11/02 silicon-on-insulator wafers  radiation hardness  nitrogen implantation   Total Dose Radiation-Hard 0. SOI CMOS Transistors and ASIC 期刊论文 半导体学报, 2006, 卷号: 27, 期号: 10, 页码: 1750-1754 Xiao Zhiqiang; Hong Genshen; Zhang Bo; Liu Zhongli 收藏  |  浏览/下载：23/0  |  提交时间：2010/11/23 Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides 期刊论文 半导体学报, 2005, 卷号: 26, 期号: 5, 页码: 862-866 Zheng Zhongshan; Liu Zhongli; Zhang Guoqiang; Li Ning; Li Guohua; Ma Hongzhi; Zhang Enxia; Zhang Zhengxuan; Wang Xi 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/23 Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET 期刊论文 chinese physics, 2005, 卷号: 14, 期号: 3, 页码: 565-570 Zheng ZS; Liu ZL; Zhang GQ; Li N; Fan K; Zhang EX; Yi WB; Chen M; Wang X 收藏  |  浏览/下载：24/0  |  提交时间：2010/03/17 SOIPMOSFET   Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation 期刊论文 semiconductor science and technology, 2005, 卷号: 20, 期号: 6, 页码: 481-484 Zheng ZS; Liu ZL; Zhang GQ; Li N; Li GH; Ma HZ; Zhang EX; Zhang ZX; Wang X 收藏  |  浏览/下载：32/5  |  提交时间：2010/03/17 OXIDES   Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation 期刊论文 journal of electronic materials, 2005, 卷号: 34, 期号: 11, 页码: l53-l56 Zhang EX; Sun JY; Chen J; Zhang ZX; Wang X; Li N; Zhang GQ; Liu ZL 收藏  |  浏览/下载：193/29  |  提交时间：2010/03/17 silicon-on-insulator (SOI)