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Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor 期刊论文
NATURE COMMUNICATIONS, 2017, 卷号: 8, 期号: 1, 页码: 970
作者:  Xiao-Xi Li;  Zhi-Qiang Fan;  Pei-Zhi Liu;  Mao-Lin Chen;  Xin Liu
收藏  |  浏览/下载：31/0  |  提交时间：2018/06/15
Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction 期刊论文
Japanese Journal of Applied Physics, 2017, 卷号: 56, 期号: 4, 页码: 04CD07
作者:  Hongjuan Wang;  Genquan Han;  Xiangwei Jiang;  Yan Liu;  Chunfu Zhang
收藏  |  浏览/下载：18/0  |  提交时间：2018/06/15
Response of MoS2 nanosheet field effect transistor under different gas environments and its long wavelength photoresponse characteristics 期刊论文
journal of alloys and compounds, 2014, 卷号: 615, 页码: 989-993
Wang, Xiaozhou; Yang, Shengxue; Yue, Qu; Wu, Fengmin; Li, Jingbo
收藏  |  浏览/下载：25/0  |  提交时间：2015/03/19
Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector 期刊论文
chinese physics b, 2014, 卷号: 23, 期号: 10, 页码: 104209
Dong, Y; Wang, GL; Wang, HP; Ni, HQ; Chen, JH; Gao, FQ; Qiao, ZT; Yang, XH; Niu, ZC
收藏  |  浏览/下载：20/0  |  提交时间：2015/03/20
Extraction of terahertz emission from a grating-coupled high-electron-mobility transistor 期刊论文
journal of semiconductors, 2013, 卷号: 34, 期号: 2, 页码: 022002
Yu, Zhou; Xinxing, Li; Renbing, Tan; Wei, Xue; Yongdan, Huang; Shitao, Lou; Baoshun, Zhang; Hua, Qin
收藏  |  浏览/下载：16/0  |  提交时间：2014/05/08
Quantum Efficiency of Charge Qubit Measurements Using a Single Electron Transistor 期刊论文
international journal of theoretical physics, 2012, 卷号: 51, 期号: 2, 页码: 629-638
Ye, Y; Ping, J; Jiao, HJ; Li, SS; Li, XQ
收藏  |  浏览/下载：9/0  |  提交时间：2013/03/17
Preparation and photoluminescence study of patterned substrate quantum wires 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 2, 页码: article no.20703
作者:  Yang XH;  He JF
收藏  |  浏览/下载：57/7  |  提交时间：2011/07/05
Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.54503
作者:  Jiang XW
收藏  |  浏览/下载：50/2  |  提交时间：2011/07/05
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG
收藏  |  浏览/下载：193/43  |  提交时间：2010/03/08
Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 8, 页码: art.no.084510
Jiang XW (Jiang Xiang-Wei); Deng HX (Deng Hui-Xiong); Li SS (Li Shu-Shen); Luo JW (Luo Jun-Wei); Wang LW (Wang Lin-Wang)
收藏  |  浏览/下载：159/62  |  提交时间：2010/03/08

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