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| Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文
17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005
Zhao, YW; Dong, ZY
  收藏 | 浏览/下载：220/68 | 提交时间：2010/03/29
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| Optical and electrical characterizations of ZnSe self-organized quantum dots grown by molecular beam epitaxy 期刊论文
acta physica sinica, 2002, 卷号: 51, 期号: 2, 页码: 310-314
Lu LW; Wang ZG; Yang CL; Wang J; Ma ZH; Sou IK; Ge WK
收藏 | 浏览/下载：93/10 | 提交时间：2010/08/12
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| Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance 期刊论文
journal of applied physics, 2002, 卷号: 92, 期号: 4, 页码: 1968-1970
Dong HW; Zhao YW; Zhang YH; Jiao JH; Zhao JQ; Lin LY
收藏 | 浏览/下载：63/15 | 提交时间：2010/08/12
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| Multiplicity factor and diffraction geometry factor for single crystal X-ray diffraction analysis and measurement of phase content in cubic GaN/GaAs(001) epilayers 期刊论文
science in china series a-mathematics physics astronomy, 2001, 卷号: 44, 期号: 4, 页码: 497-503
Qu B; Zheng XH; Wang YT; Feng ZH; Han JY; Liu S; Lin SM; Yang H; Liang JW
收藏 | 浏览/下载：106/6 | 提交时间：2010/08/12
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| Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation 期刊论文
applied physics letters, 2001, 卷号: 78, 期号: 17, 页码: 2509-2511
Sheng SR; Liao XB; Kong GL
收藏 | 浏览/下载：103/17 | 提交时间：2010/08/12
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| Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots 期刊论文
physical review b, 2000, 卷号: 61, 期号: 8, 页码: 5530-5534
Wang HL; Yang FH; Feng SL; Zhu HJ; Ning D; Wang H; Wang XD
收藏 | 浏览/下载：49/0 | 提交时间：2010/08/12
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| Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 期刊论文
compound semiconductors 1999, 2000, 期号: 166, 页码: 251-256
Wang H; Wang HL; Feng SL; Zhu HJ; Wang XD; Guo ZS; Ning D
收藏 | 浏览/下载：29/0 | 提交时间：2010/08/12
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| Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 会议论文
26th international symposium on compound semiconducors, berlin, germany, aug 22-26, 1999
Wang H; Wang HL; Feng SL; Zhu HJ; Wang XD; Guo ZS; Ning D
收藏 | 浏览/下载：16/0 | 提交时间：2010/11/15
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| Electronic characteristics of InAs self-assembled quantum dots 会议论文
9th international conference on modulated semiconductor structures (mss9), fukuoka, japan, jul 12-16, 1999
Wang HL; Feng SL; Zhu HJ; Ning D; Chen F
收藏 | 浏览/下载：11/0 | 提交时间：2010/11/15
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| Electronic characteristics of InAs self-assembled quantum dots 期刊论文
physica e-low-dimensional systems & nanostructures, 2000, 卷号: 7, 期号: 3-4, 页码: 383-387
Wang HL; Feng SL; Zhu HJ; Ning D; Chen F
收藏 | 浏览/下载：39/0 | 提交时间：2010/08/12
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