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科研机构
半导体研究所 [40]
内容类型
期刊论文 [37]
会议论文 [3]
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2011 [1]
2009 [4]
2008 [3]
2007 [2]
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2005 [3]
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半导体物理 [40]
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Two-phonon processes of intraband relaxation in the terahertz regime in quantum dots
期刊论文
journal of physics-condensed matter, 2011, 卷号: 23, 期号: 22, 页码: article no.225303
Wang ZW
;
Li SS
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浏览/下载:42/3
  |  
提交时间:2011/07/05
Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations
期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: art. no. 155403
作者:
Li JB
;
Hou QF
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浏览/下载:65/11
  |  
提交时间:2010/03/08
N-TYPE GAN
ELECTRON-MOBILITY TRANSISTORS
VAPOR-PHASE EPITAXY
DEFECTS
THERMOLUMINESCENCE
CARBON
TRAP
Strong Spin-Orbit Interactions in an InAlAs/InGaAs/InAlAs Two-Dimensional Electron Gas by Weak Antilocalization Analysis
期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 6, 页码: art. no. 063004
Sun L
;
Zhou WZ
;
Yu GL
;
Shang LY
;
Gao KH
;
Zhou YM
;
Lin T
;
Cui LJ
;
Zeng YP
;
Chu JH
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  |  
浏览/下载:73/0
  |  
提交时间:2010/03/08
QUANTUM-WELLS
GRADED HETEROSTRUCTURES
LOCALIZATION
SCATTERING
SYSTEMS
TIME
HETEROJUNCTIONS
Electron spin quantum beats and room temperature g factor in GaAsN
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041911
Zhao HM
;
Lombez L
;
Liu BL
;
Sun BQ
;
Xue QK
;
Chen DM
;
Marie X
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  |  
浏览/下载:58/2
  |  
提交时间:2010/03/08
electron spin polarisation
gallium arsenide
g-factor
high-speed optical techniques
III-V semiconductors
semiconductor thin films
Zeeman effect
Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer
期刊论文
superlattices and microstructures, 2009, 卷号: 45, 期号: 2, 页码: 54-59
作者:
Zhang ML
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  |  
浏览/下载:161/57
  |  
提交时间:2010/03/08
AlGaN/GaN heterostructure
Superlattices (SLs)
Root mean square roughness (RMS)
Sheet resistance
Single-photon emission from a single InAs quantum dot
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 2, 页码: 501-504
Dou, XM
;
Sun, BQ
;
Huang, SS
;
Ni, HQ
;
Niu, ZC
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  |  
浏览/下载:39/2
  |  
提交时间:2010/03/08
FLUORESCENCE
TEMPERATURE
Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy
期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123
Gao, HL
;
Zeng, YP
;
Wang, BQ
;
Zhu, ZP
;
Wang, ZG
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  |  
浏览/下载:54/6
  |  
提交时间:2010/03/08
molecular beam epitaxy
semiconducting III-V materials
high electron mobility transistors
Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands
期刊论文
acta physica sinica, 2008, 卷号: 57, 期号: 6, 页码: 3818-3822
Shang, LY
;
Lin, T
;
Zhou, WZ
;
Guo, SL
;
Li, DL
;
Gao, HL
;
Cui, LJ
;
Zeng, YP
;
Chu, JH
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  |  
浏览/下载:84/20
  |  
提交时间:2010/03/08
In0.53Ga0.47As/In-0.52 Al0.48As quantum well
filling factor
magnetotransport measurement
Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property
期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541
Zhao, YW (Zhao You-Wen)
;
Miao, SS (Miao Shan-Shan)
;
Dong, ZY (Dong Zhi-Yuan)
;
Lue, XH (Lue Xiao-Hong)
;
Deng, AH (Deng Ai-Hong)
;
Yang, J (Yang Jun)
;
Wang, B (Wang Bo)
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/03/29
indium phosphide
Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature
期刊论文
journal of luminescence, 2007, 卷号: 122 sp.iss.si, 期号: 0, 页码: 188-190
Sun, Z (Sun, Z.)
;
Yang, XD (Yang, X. D.)
;
Sun, BQ (Sun, B. Q.)
;
Ji, Y (Ji, Y.)
;
Zhang, SY (Zhang, S. Y.)
;
Ni, HQ (Ni, H. Q.)
;
Niu, ZC (Niu, Z. C.)
;
Xu, ZY (Xu, Z. Y.)
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  |  
浏览/下载:27/0
  |  
提交时间:2010/03/29
GaInNAs/GaAs
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