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Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.54503
作者:  Jiang XW
收藏  |  浏览/下载：50/2  |  提交时间：2011/07/05
Defects in gallium nitride nanowires: First principles calculations 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044305
Wang ZG (Wang Zhiguo); Li JB (Li Jingbo); Gao F (Gao Fei); Weber WJ (Weber William J.)
收藏  |  浏览/下载：105/1  |  提交时间：2010/10/11
Size distributions of quantum islands on stepped substrates 期刊论文
journal of chemical physics, 2009, 卷号: 131, 期号: 15, 页码: art.no.154704
Liang S (Liang, S.); Zhu HL (Zhu, H. L.); Wang W (Wang, W.)
收藏  |  浏览/下载：304/92  |  提交时间：2010/03/08
Monolithic integration of sampled grating DBR with electroabsorption modulator by combining selective-area-growth MOCVD and quantum-well intermixing 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 10, 页码: 3670-3672
Liu, HB; Zhao, LJ; Pan, JQ; Zhu, HL; Zhou, F; Wang, BJ; Wang, W
收藏  |  浏览/下载：19/0  |  提交时间：2010/03/08
Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes 期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 4, 页码: 1472-1474
Zhang, Y; Han, CL; Gao, JF; Zhu, ZP; Wang, BQ; Zeng, YP
收藏  |  浏览/下载：55/6  |  提交时间：2010/03/08
Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes on quantum well widths 期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 12, 页码: 4645-4647
作者:  Zhang Y;  Zhang Y
收藏  |  浏览/下载：268/32  |  提交时间：2010/03/08
Plasmonic surface-wave splitter 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 16, 页码: art.no.161130
Gan QQ (Gan, Qiaoqiang); Guo BS (Guo, Baoshan); Song GF (Song, Guofeng); Chen LG (Chen, Lianghui); Fu Z (Fu, Zhan); Ding YJ (Ding, Yujie J.); Bartoli FJ (Bartoli, Filbert J.)
收藏  |  浏览/下载：43/0  |  提交时间：2010/03/29
Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 4, 页码: 1005-1008
作者:  Yang XH
收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 期刊论文
journal of crystal growth, 2006, 卷号: 288, 期号: 1, 页码: 40529
作者:  Wu DH;  Niu ZC;  Jiang DS;  Xu YQ
收藏  |  浏览/下载：81/0  |  提交时间：2010/04/11
Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (1-00) substrates by using MOCVD 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 5, 页码: 1114-1119
作者:  Liang S;  Pan JQ
收藏  |  浏览/下载：45/0  |  提交时间：2010/04/11

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