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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Strong up-conversion emissions in ZnO:Er3+, ZnO:Er3+-Yb3+ nanoparticles and their surface modified counterparts 期刊论文 journal of colloid and interface science, 2011, 卷号: 358, 期号: 2, 页码: 334-337 作者:  Li JB 收藏  |  浏览/下载：54/5  |  提交时间：2011/07/05 Sol-gel  ZnO:Er-Yb nanoparticles  Up-conversion  Core/shell  Three-photon processes  NANOCRYSTALLINE YTTRIA  OPTICAL SPECTROSCOPY  GLASSES  LUMINESCENCE  TEMPERATURE  ER3+  YB3+  GREEN  FILMS  OXIDE   Improved tunneling magnetoresistance in (Ga,Mn)As/AlO(x)/CoFeB magnetic tunnel junctions 期刊论文 applied physics letters, 2011, 卷号: 98, 期号: 26, 页码: 262501 Yu GQ; Chen L; Rizwan S; Zhao JH; Xu K; Han XF 收藏  |  浏览/下载：36/0  |  提交时间：2012/01/06 TEMPERATURE  GA1-XMNXAS  TRANSPORT  EPILAYERS  (GA  MN)AS  FILMS   Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers 期刊论文 chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 018101 作者:  Xu YQ;  Tang B 收藏  |  浏览/下载：221/40  |  提交时间：2010/03/08 SURFACE-MORPHOLOGY  GROWTH  SUPERLATTICES  HETEROSTRUCTURES  TEMPERATURE  DETECTORS  GAAS(100)  FILMS  INAS  INSB   Electrical control of dynamic spin splitting induced by exchange interaction as revealed by time-resolved Kerr rotation in a degenerate spin-polarized electron gas 期刊论文 epl, 2008, 卷号: 83, 期号: 4, 页码: art. no. 47006 Zhang, F; Zheng, HZ; Ji, Y; Liu, J; Li, GR 收藏  |  浏览/下载：47/0  |  提交时间：2010/03/08 GAAS QUANTUM-WELLS   Direct observation of coherent spin transfer processes in an InGaAs/GaAs quantum well via two-color time-resolved Kerr rotation measurements 期刊论文 semiconductor science and technology, 2008, 卷号: 23, 期号: 7, 页码: art. no. 075021 Ruan, XZ; Sun, BQ; Ji, Y; Yang, W; Zhao, JH; Xu, ZY 收藏  |  浏览/下载：56/4  |  提交时间：2010/03/08 PHOTONIC CRYSTAL FIBER  SELF-PHASE-MODULATION  SEMICONDUCTOR SPINTRONICS  CONTINUUM GENERATION  SAPPHIRE LASERS  OPTICAL-FIBERS  SPECTROSCOPY  HETEROSTRUCTURES  SYNCHRONIZATION  TEMPERATURE   Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 4, 页码: 1005-1008 作者:  Yang XH 收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11 LASERS  TEMPERATURE  PHOTOLUMINESCENCE   Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers 期刊论文 ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318 Leung BH; Chan NH; Fong WK; Zhu CF; Ng SW; Lui HF; Tong KY; Surya C; Lu LW; Ge WK 收藏  |  浏览/下载：129/0  |  提交时间：2010/08/12 deep level transient Fourier spectroscopy  (DLTFS)  gallium nitride (GaN)  intermediate-temperature buffer layer (ITBF)  low-frequency noise  RESONANT-TUNNELING DIODES  GENERATION-RECOMBINATION NOISE  RANDOM-TELEGRAPH NOISE  ULTRAVIOLET PHOTODETECTORS  DEVICES