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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy 期刊论文 chinese physics letters, 2009, 卷号: 26, 期号: 2, 页码: art. no. 028102 作者:  Tang B;  Wang GW;  Xu YQ 收藏  |  浏览/下载：160/45  |  提交时间：2010/03/08 INAS/GA1-XINXSB SUPERLATTICE  GASB  HETEROJUNCTIONS  PHOTODIODES  SEGREGATION  LAYERS  INAS  ALSB   Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer 期刊论文 chinese physics letters, 2003, 卷号: 20, 期号: 11, 页码: 2061-2063 Fang ZD; Gong Z; Miao ZH; Xu XH; Ni HQ; Niu ZC 收藏  |  浏览/下载：64/0  |  提交时间：2010/08/12 1.3 MU-M  MOLECULAR-BEAM EPITAXY  TEMPERATURE-DEPENDENCE  LASING CHARACTERISTICS  LASERS  WAVELENGTH  SEPARATION  LINEWIDTH  PROPERTY  GAIN   Luminescence properties of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer 期刊论文 physics of low-dimensional structures, 2003, 期号: 1-2, 页码: 27-33 Fang, ZD; Gong, Z; Miao, ZH; Xu, XH; Ni, HQ; Niu, ZC 收藏  |  浏览/下载：48/14  |  提交时间：2010/03/09 TEMPERATURE-DEPENDENCE  PHOTOLUMINESCENCE  SEPARATION  WAVELENGTH  LASERS   Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy 期刊论文 physical review b, 2002, 卷号: 66, 期号: 19, 页码: art.no.195321 作者:  Ye XL 收藏  |  浏览/下载：66/0  |  提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY  EXCITON LOCALIZATION  INVERSION ASYMMETRY  COMMON-ATOM  LIGHT-HOLE  HETEROSTRUCTURES  SUPERLATTICES  POLARIZATION  SEGREGATION  MORPHOLOGY   Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates 期刊论文 applied physics letters, 2001, 卷号: 78, 期号: 4, 页码: 478-479 Chen NF; Zhong XR; Lin LY; Zhang M; Wang YS; Bai XW; Zhao J 收藏  |  浏览/下载：41/0  |  提交时间：2010/08/12 FLOATING-ZONE GROWTH  ZERO GRAVITY  MICROGRAVITY  STOICHIOMETRY  SEGREGATION  SILICON  GE   Relationship between deep-level centers and stoichiometry in semi-insulating gallium arsenide 期刊论文 journal of applied physics, 1998, 卷号: 84, 期号: 10, 页码: 5826-5827 Lin LY; Chen NF; Zhong XR; He HJ; Li CJ 收藏  |  浏览/下载：36/0  |  提交时间：2010/08/12 SEMIINSULATING GAAS  LEC-GAAS  DEFECTS  SEGREGATION  CARBON  BORON