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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Theoretical design and performance of InxGa1-xN two-junction solar cells 期刊论文 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 24, 页码: art. no. 245104 Zhang, XB; Wang, XL; Xiao, HL; Yang, CB; Ran, JX; Wang, CM; Hou, QF; Li, JM; Wang, ZG 收藏  |  浏览/下载：29/2  |  提交时间：2010/03/08 IN1-XGAXN ALLOYS  BAND-GAP  IRRADIANCE  SINGLE  INN   Photoelectric characteristics of metal/InGaN/GaN heterojunction structure 期刊论文 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 16, 页码: art. no. 165108 Sun, X; Liu, WB; Jiang, DS; Liu, ZS; Zhang, S; Wang, LL; Wang, H; Zhu, JJ; Duan, LH; Wang, YT; Zhao, DG; Zhang, SM; Yang, H 收藏  |  浏览/下载：64/0  |  提交时间：2010/03/08 FUNDAMENTAL-BAND GAP  IN1-XGAXN ALLOYS  INN   High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition 期刊论文 ieee journal of quantum electronics, 1999, 卷号: 35, 期号: 10, 页码: 1535-1541 Yang GW; Hwu RJ; Xu ZT; Ma XY 收藏  |  浏览/下载：44/0  |  提交时间：2010/08/12 quantum-well lasers  semiconductor diodes  semiconductor epitaxial layers  semiconductor lasers  semiconductor materials  NM DIODE-LASERS  WAVE-GUIDE  AMPLIFIER  FRONT-FACET POWER   High energy ion implantation enhanced intermixed quantum well structures and their absorption characteristics in passive optical waveguides 期刊论文 nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 1997, 卷号: 132, 期号: 4, 页码: 599-606 Han DJ; Chan KT; Zhuang WR; Wang WX 收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12 GATE SWITCH ARRAYS  LASERS  STEP  INP  SUPERLATTICE  INTEGRATION  ALGAAS