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科研机构
半导体研究所 [31]
内容类型
期刊论文 [28]
会议论文 [3]
发表日期
2011 [2]
2010 [2]
2009 [2]
2008 [1]
2007 [1]
2006 [1]
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半导体物理 [31]
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Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 42, 页码: 425103
Lang, XL
;
Xia, JB
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浏览/下载:78/0
  |  
提交时间:2012/01/06
GASB SUPER-LATTICE
SEMICONDUCTOR HETEROSTRUCTURES
DEFORMATION POTENTIALS
II SUPERLATTICES
BAND PARAMETERS
DETECTORS
APPROXIMATION
TRANSITIONS
Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation
期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 5, 页码: 54320
Ning JQ
;
Xu SJ
;
Ruan XZ
;
Ji Y
;
Zheng HZ
;
Sheng WD
;
Liu HC
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浏览/下载:15/0
  |  
提交时间:2012/01/06
WELLS
RELAXATION
HOLE
PHOTOLUMINESCENCE
SEMICONDUCTORS
LOCALIZATION
TRANSITIONS
EXCITONS
CARRIERS
GROWTH
Anomalous optical and electronic properties of dense sodium
期刊论文
physics letters a, 2010, 卷号: 374, 期号: 43, 页码: 4458-4464
Li DF (Li Dafang)
;
Liu HY (Liu Hanyu)
;
Wang BT (Wang Baotian)
;
Shi HL (Shi Hongliang)
;
Zhu SP (Zhu Shaoping)
;
Yan J (Yan Jun)
;
Zhang P (Zhang Ping)
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浏览/下载:57/0
  |  
提交时间:2010/11/02
Optical property
First-principles method
Bader analysis
Dense sodium phase
AUGMENTED-WAVE METHOD
METALLIC SODIUM
CONSTITUTION
TRANSITIONS
NA
Tensile and compressive mechanical behavior of twinned silicon carbide nanowires
期刊论文
acta materialia, 2010, 卷号: 58, 期号: 6, 页码: 1963-1971
作者:
Li JB
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  |  
浏览/下载:63/1
  |  
提交时间:2010/04/22
Twinning
Nanotructures
Fracture
Buckling
Molecular dynamics
CHEMICAL-VAPOR-DEPOSITION
AB-INITIO CALCULATIONS
BETA-SIC NANOWIRES
LOW-TEMPERATURE
THIN-FILMS
SIMULATION
ELASTICITY
NANOTUBES
POLYTYPES
GROWTH
Spin states in InAs/AlSb/GaSb semiconductor quantum wells
期刊论文
physical review b, 2009, 卷号: 80, 期号: 3, 页码: art. no. 035303
作者:
Li J
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浏览/下载:155/2
  |  
提交时间:2010/03/08
ELECTRON-HOLE SYSTEM
BAND-STRUCTURE
COMPOUND SEMICONDUCTORS
RELAXATION ANISOTROPY
GAP HETEROSTRUCTURES
OPTICAL-TRANSITIONS
GROUND-STATE
SUPERLATTICES
FIELD
HYBRIDIZATION
Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107
作者:
Qian X
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浏览/下载:82/7
  |  
提交时间:2010/03/08
aluminium compounds
carrier lifetime
gallium arsenide
high-frequency effects
III-V semiconductors
optical Kerr effect
semiconductor heterojunctions
spin dynamics
two-dimensional electron gas
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles
期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ
;
Zhu LF
;
Zhao YH
;
Liu BG
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浏览/下载:218/56
  |  
提交时间:2010/03/08
ab initio calculations
aluminium compounds
annealing
band structure
chromium
Curie temperature
density functional theory
exchange interactions (electron)
ferromagnetic materials
III-V semiconductors
semimagnetic semiconductors
total energy
vacancies (crystal)
Electronic structure of Mn-doped ZnO quantum wires: A mean-field theory study
期刊论文
physical review b, 2007, 卷号: 75, 期号: 20, 页码: art.no.205113
Zhu YH
;
Xia JB
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浏览/下载:31/0
  |  
提交时间:2010/03/29
MAGNETIC SEMICONDUCTORS
Interdot interaction induced zero-bias maximum of the differential conductance in parallel double quantum dots
期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 4, 页码: art.no.043705
Chi F
;
Li SS
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  |  
浏览/下载:94/0
  |  
提交时间:2010/04/11
AHARONOV-BOHM INTERFEROMETER
SINGLE-ELECTRON TRANSISTOR
COULOMB-BLOCKADE
ANDERSON MODEL
MAGNETIC-FLUX
KONDO REGIME
TRANSPORT
EQUILIBRIUM
DEVICES
Effects of magnetic field on the electronic structure of wurtzite quantum dots: Calculations using effective-mass envelope function theory
期刊论文
physical review b, 2005, 卷号: 72, 期号: 7, 页码: art.no.075363
Zhang, XW
;
Xia, JB
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浏览/下载:137/26
  |  
提交时间:2010/03/17
SEMICONDUCTORS
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