Spin states in InAs/AlSb/GaSb semiconductor quantum wells

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	Spin states in InAs/AlSb/GaSb semiconductor quantum wells
	Li J
刊名	physical review b
	2009
卷号	80 期号:3 页码:art. no. 035303
关键词	ELECTRON-HOLE SYSTEM BAND-STRUCTURE COMPOUND SEMICONDUCTORS RELAXATION ANISOTROPY GAP HETEROSTRUCTURES OPTICAL-TRANSITIONS GROUND-STATE SUPERLATTICES FIELD HYBRIDIZATION
ISSN号	1098-0121
通讯作者	li j chinese acad sci inst semicond sklsm pob 912 beijing 100083 peoples r china. e-mail address: kchang@red.semi.ac.cn
中文摘要	we investigate theoretically the spin states in inas/alsb/gasb broken-gap quantum wells by solving the kane model and the poisson equation self-consistently. the spin states in inas/alsb/gasb quantum wells are quite different from those obtained by the single-band rashba model due to the electron-hole hybridization. the rashba spin splitting of the lowest conduction subband shows an oscillating behavior. the d'yakonov-perel' spin-relaxation time shows several peaks with increasing the fermi wave vector. by inserting an alsb barrier between the inas and gasb layers, the hybridization can be greatly reduced. consequently, the spin orientation, the spin splitting, and the d'yakonov-perel' spin-relaxation time can be tuned significantly by changing the thickness of the alsb barrier.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7041]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li J. Spin states in InAs/AlSb/GaSb semiconductor quantum wells[J]. physical review b,2009,80(3):art. no. 035303.
APA	Li J.(2009).Spin states in InAs/AlSb/GaSb semiconductor quantum wells.physical review b,80(3),art. no. 035303.
MLA	Li J."Spin states in InAs/AlSb/GaSb semiconductor quantum wells".physical review b 80.3(2009):art. no. 035303.