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科研机构
半导体研究所 [23]
内容类型
期刊论文 [21]
会议论文 [2]
发表日期
2009 [4]
2008 [1]
2007 [2]
2006 [2]
2005 [2]
2003 [1]
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半导体物理 [23]
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Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
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  |  
浏览/下载:70/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Measuring spin diffusion of electrons in bulk n-GaAs using circularly dichromatic absorption difference spectroscopy of spin gratings
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 20, 页码: art. no. 202109
Yu HL
;
Zhang XM
;
Wang PF
;
Ni HQ
;
Niu ZC
;
Lai TS
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  |  
浏览/下载:53/4
  |  
提交时间:2010/03/08
circular dichroism
diffraction gratings
diffusion
gallium arsenide
homodyne detection
III-V semiconductors
spin dynamics
spin polarised transport
The bipolar doping of ZnS via native defects and external dopants
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 11, 页码: art. no. 113704
作者:
Li JB
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  |  
浏览/下载:132/30
  |  
提交时间:2010/03/08
AUGMENTED-WAVE METHOD
P-TYPE ZNO
POINT-DEFECTS
II-VI
NITROGEN
SEMICONDUCTORS
1ST-PRINCIPLES
COMPENSATION
ENHANCEMENT
Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107
作者:
Qian X
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  |  
浏览/下载:81/7
  |  
提交时间:2010/03/08
aluminium compounds
carrier lifetime
gallium arsenide
high-frequency effects
III-V semiconductors
optical Kerr effect
semiconductor heterojunctions
spin dynamics
two-dimensional electron gas
The formation and electronic structures of 3d transition-metal atoms doped in silicon nanowires
期刊论文
journal of applied physics, 2008, 卷号: 104, 期号: 8, 页码: art. no. 084307
Xu, Q
;
Li, JB
;
Li, SS
;
Xia, JB
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  |  
浏览/下载:75/1
  |  
提交时间:2010/03/08
EXCHANGE INTERACTION
SEMICONDUCTORS
GAAS
ENERGIES
DOTS
MN
Cr-doped InAs self-organized diluted magnetic quantum dots with room-temperature ferromagnetism
期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 7, 页码: 2118-2121
Zheng YH (Zheng Yu-Hong)
;
Zhao JH (Zhao Jian-Hua)
;
Bi JF (Bi Jing-Feng)
;
Wang WZ (Wang Wei-Zhu)
;
Ji Y (Ji Yang)
;
Wu XG (Wu Xiao-Guang)
;
Xia JB (Xia Jian-Bai)
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  |  
浏览/下载:39/0
  |  
提交时间:2010/03/29
THIN-FILMS
Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si delta-doped on the barriers
期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 7, 页码: 4143-4147
Zhou WZ (Zhou Wen-Zheng)
;
Lin T (Lin Tie)
;
Shang LY (Shang Li-Yan)
;
Huang ZM (Huang Zhi-Ming)
;
Zhu B (Zhu Bo)
;
Cui LJ (Cui Li-Jie)
;
Gao HL (Gao Hong-Ling)
;
Li DL (Li Dong-Lin)
;
Guo SL (Guo Shao-Ling)
;
Gui YS (Gui Yong-Sheng)
;
Chu JH (Chu Jun-Hao)
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  |  
浏览/下载:139/0
  |  
提交时间:2010/03/29
SdH oscillation
Experimental study of a pulsed ytterbium-doped fibre laser with fast and slow saturable absorbers in a linear cavity
期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 7, 页码: 1790-1792
Gan Y (Gan Yu)
;
Xiang WH (Xiang Wang-Hua)
;
Zhou XF (Zhou Xiao-Fang)
;
Zhang GZ (Zhang Gui-Zhong)
;
Zhang B (Zhang Bing)
;
Wang YG (Wang Yong-Gang)
;
Ma XY (Ma Xiao-Yu)
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  |  
浏览/下载:36/0
  |  
提交时间:2010/04/11
MODE-LOCKING
RING LASER
LOW-TEMPERATURE
GENERATION
GAAS
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors
会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
Zeng, YX (Zeng, Yuxin)
;
Liu, W (Liu, Wei)
;
Yang, FH (Yang, Fuhua)
;
Xu, P (Xu, Ping)
;
Tan, PH (Tan, Pingheng)
;
Zheng, HZ (Zheng, Houzhi)
;
Zeng, YP (Zeng, Yiping)
;
Xing, YJ (Xing, Yingjie)
;
Yu, DP (Yu, Dapeng)
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  |  
浏览/下载:98/31
  |  
提交时间:2010/03/29
InAs quantum dot
photoluminescence
modulation-doped
field effect transistor
MU-M
CAPPING LAYER
Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x/GaN multiple quantum wells
期刊论文
physica e-low-dimensional systems & nanostructures, 2005, 卷号: 25, 期号: 4, 页码: 575-581
Li JM
;
Han X
;
Wu JJ
;
Liu XL
;
Zhu QS
;
Wang ZG
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2010/03/17
quantum wells
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