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科研机构
半导体研究所 [11]
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期刊论文 [10]
会议论文 [1]
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2010 [1]
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2002 [2]
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半导体物理 [11]
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Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films
期刊论文
journal of magnetism and magnetic materials, 2010, 卷号: 322, 期号: 21, 页码: 3250-3254
Chen L (Chen L.)
;
Yan S (Yan S.)
;
Xu PF (Xu P. F.)
;
Lu J (Lu J.)
;
Deng JJ (Deng J. J.)
;
Ji Y (Ji Y.)
;
Wang KY (Wang K. Y.)
;
Zhao JH (Zhao J. H.)
收藏
  |  
浏览/下载:90/4
  |  
提交时间:2010/09/07
Magnetic semiconductor
Magnetic anisotropy
Magneto-transport phenomenon
Molecular-beam epitaxy
Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations
期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: art. no. 155403
作者:
Li JB
;
Hou QF
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  |  
浏览/下载:65/11
  |  
提交时间:2010/03/08
N-TYPE GAN
ELECTRON-MOBILITY TRANSISTORS
VAPOR-PHASE EPITAXY
DEFECTS
THERMOLUMINESCENCE
CARBON
TRAP
Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 18, 页码: art.no.182505
作者:
Chen L
;
Qian X
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  |  
浏览/下载:84/39
  |  
提交时间:2010/03/08
annealing
Structural characterization of stable amorphous silicon films
期刊论文
solid state communications, 2002, 卷号: 122, 期号: 5, 页码: 283-286
Zhang SB
;
Kong GL
;
Wang YQ
;
Sheng SR
;
Liao XB
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  |  
浏览/下载:53/0
  |  
提交时间:2010/08/12
semiconductors
thin film
photoconductivity and photovoltaics
CONDUCTIVITY
SI
Positron-annihilation study of compensation defects in InP
期刊论文
journal of applied physics, 2002, 卷号: 91, 期号: 4, 页码: 1998-2001
Shan YY
;
Deng AH
;
Ling CC
;
Fung S
;
Ling CD
;
Zhao YW
;
Sun TN
;
Sun NF
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  |  
浏览/下载:99/9
  |  
提交时间:2010/08/12
UNDOPED SEMIINSULATING INP
INDIUM-PHOSPHIDE
LIFETIME
VACANCY
MECHANISMS
ACCEPTOR
GROWTH
GAAS
Surface acoustic wave velocity and electromechanical coupling coefficient of GaN grown on (0001) sapphire by metal-organic vapour phase epitaxy
期刊论文
chinese physics letters, 2001, 卷号: 18, 期号: 10, 页码: 1418-1419
作者:
Han PD
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  |  
浏览/下载:84/7
  |  
提交时间:2010/08/12
THIN-FILMS
DEPOSITION
DIODES
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)
会议论文
2nd international conference on radiation effects on semiconductor materials, detectors and devices, florence, italy, mar 04-06, 1998
Li Z
;
Dezilllie B
;
Eremin V
;
Li CJ
;
Verbitskaya E
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  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
strip detectors
silicon detectors
annealing
simulation
irradiation
N-EFF
JUNCTION DETECTORS
RADIATION-DAMAGE
MODELS
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)
期刊论文
nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1999, 卷号: 426, 期号: 1, 页码: 38-46
Li Z
;
Dezilllie B
;
Eremin V
;
Li CJ
;
Verbitskaya E
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/08/12
strip detectors
silicon detectors
annealing
simulation
irradiation
JUNCTION DETECTORS
RADIATION-DAMAGE
MODELS
N-EFF
Effect of temperature on implant isolation characteristics of AlGaAs/GaAs multilayer heterojunction structure
期刊论文
defect recognition and image processing in semiconductors 1995, 1996, 卷号: 149, 期号: 0, 页码: 85-90
Xu HD
;
Wang S
;
Zheng D
;
Liu HZ
;
Zhou LS
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/17
GAAS
SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS
期刊论文
physical review b, 1993, 卷号: 47, 期号: 15, 页码: 9418-9424
GISLASON HP
;
YANG BH
;
LINNARSSON M
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/11/15
IMPLANTED GAAS
EMISSION
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