Structural characterization of stable amorphous silicon films

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	Structural characterization of stable amorphous silicon films
	Zhang SB ; Kong GL ; Wang YQ ; Sheng SR ; Liao XB
刊名	solid state communications
	2002
卷号	122 期号:5 页码:283-286
关键词	semiconductors thin film photoconductivity and photovoltaics CONDUCTIVITY SI
ISSN号	0038-1098
通讯作者	zhang sb,chinese acad sci,inst semicond,state lab surface phys,pob 912,beijing 100083,peoples r china.
中文摘要	a kind of hydrogenated diphasic, silicon films has been prepared by a new regime of plasma enhanced chemical vapor deposition (pecvd) in the region adjacent to the phase transition from amorphous to crystalline state. the photoelectronic and microstructural properties of the films have been investigated by the constant photocurrent method (cpm), raman scattering and nuclear magnetic resonance (nmr). our experimental results and corresponding analyses showed that the diphasic films, incorporated with a subtle boron compensation, could gain both the fine photosensitivity and high stability, provided the crystalline fraction (f) was controlled in the range of 0 < f < 0.3. when compared with the conventional hydrogenated amorphous silicon (a-si:h), the diphasic films are more ordered and robust in the microstructure, and have a less clustered phase in the si-h bond configurations. (c) 2002 elsevier science ltd. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11898]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang SB,Kong GL,Wang YQ,et al. Structural characterization of stable amorphous silicon films[J]. solid state communications,2002,122(5):283-286.
APA	Zhang SB,Kong GL,Wang YQ,Sheng SR,&Liao XB.(2002).Structural characterization of stable amorphous silicon films.solid state communications,122(5),283-286.
MLA	Zhang SB,et al."Structural characterization of stable amorphous silicon films".solid state communications 122.5(2002):283-286.