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科研机构
半导体研究所 [35]
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期刊论文 [30]
会议论文 [5]
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2010 [2]
2009 [1]
2008 [7]
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半导体物理 [35]
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Codoping of magnesium with oxygen in gallium nitride nanowires
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 10, 页码: art. no. 103112
Wang ZG (Wang Zhiguo)
;
Li JB (Li Jingbo)
;
Gao F (Gao Fei)
;
Weber WJ (Weber William J.)
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浏览/下载:31/3
  |  
提交时间:2010/04/13
MOLECULAR-BEAM EPITAXY
Tensile and compressive mechanical behavior of twinned silicon carbide nanowires
期刊论文
acta materialia, 2010, 卷号: 58, 期号: 6, 页码: 1963-1971
作者:
Li JB
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  |  
浏览/下载:63/1
  |  
提交时间:2010/04/22
Twinning
Nanotructures
Fracture
Buckling
Molecular dynamics
CHEMICAL-VAPOR-DEPOSITION
AB-INITIO CALCULATIONS
BETA-SIC NANOWIRES
LOW-TEMPERATURE
THIN-FILMS
SIMULATION
ELASTICITY
NANOTUBES
POLYTYPES
GROWTH
Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911
作者:
Chen L
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  |  
浏览/下载:74/0
  |  
提交时间:2010/03/08
annealing
gallium arsenide
iron
magnetic anisotropy
magnetic epitaxial layers
magnetisation
molecular beam epitaxial growth
transmission electron microscopy
X-ray diffraction
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles
期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ
;
Zhu LF
;
Zhao YH
;
Liu BG
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  |  
浏览/下载:218/56
  |  
提交时间:2010/03/08
ab initio calculations
aluminium compounds
annealing
band structure
chromium
Curie temperature
density functional theory
exchange interactions (electron)
ferromagnetic materials
III-V semiconductors
semimagnetic semiconductors
total energy
vacancies (crystal)
Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112
Ma, P
;
Gai, YQ
;
Wang, JX
;
Yang, FH
;
Zeng, YP
;
Li, JM
;
Li, JB
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  |  
浏览/下载:25/0
  |  
提交时间:2010/03/08
P-TYPE GAN
MOLECULAR-BEAM EPITAXY
AUGMENTED-WAVE METHOD
VAPOR-PHASE EPITAXY
ELECTRICAL-PROPERTIES
OXYGEN
ACTIVATION
SILICON
Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy
期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123
Gao, HL
;
Zeng, YP
;
Wang, BQ
;
Zhu, ZP
;
Wang, ZG
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  |  
浏览/下载:54/6
  |  
提交时间:2010/03/08
molecular beam epitaxy
semiconducting III-V materials
high electron mobility transistors
Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4097-4100
Lin, GQ
;
Zeng, YP
;
Wang, XL
;
Liu, HX
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  |  
浏览/下载:23/0
  |  
提交时间:2010/03/08
RHEED
INTERLAYER
PRESSURE
NITRIDES
LAYERS
MBE
Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition
期刊论文
japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031 part 1
Zhong, L
;
Ma, XY
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  |  
浏览/下载:55/0
  |  
提交时间:2010/03/08
tensile strain
GaAsP/GaInP
photoluminescence
quantum well
laser diodes
LP-MOCVD
Oxygen pressure dependences of structure and properties of ZnO films deposited on amorphous glass substrates by pulsed laser deposition
期刊论文
japanese journal of applied physics, 2008, 卷号: 47, 期号: 4, 页码: 2225-2229 part 1
Zhu, BL
;
Zhao, XZ
;
Xu, S
;
Su, FH
;
Li, GH
;
Wu, XG
;
Wu, J
;
Wu, R
;
Liu, J
收藏
  |  
浏览/下载:42/2
  |  
提交时间:2010/03/08
laser ablation
zinc oxide
deposition process
optical properties
electrical properties and measurements
Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 19, 页码: art. no. 191118
Zhang JY
;
Cai LE
;
Zhang BP
;
Li SQ
;
Lin F
;
Shang JZ
;
Wang DX
;
Lin KC
;
Yu JZ
;
Wang QM
收藏
  |  
浏览/下载:27/1
  |  
提交时间:2010/03/08
gallium compounds
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