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| Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110) 期刊论文 nanoscale research letters, 2011, 卷号: 6, 页码: article no.125 作者: Chen L 收藏  |  浏览/下载:36/1  |  提交时间:2011/07/05
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| Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires 期刊论文 chemphyschem, 2010, 卷号: 11, 期号: 15, 页码: 3329-3332 Wang ZG (Wang Zhiguo); Li JB (Li Jingbo); Gao F (Gao Fei); Weber WJ (Weber William J.) 收藏  |  浏览/下载:24/0  |  提交时间:2010/12/05
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| Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface 期刊论文 journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911 作者: Chen L 收藏  |  浏览/下载:74/0  |  提交时间:2010/03/08
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| Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods 期刊论文 journal of applied physics, 2009, 卷号: 106, 期号: 2, 页码: art. no. 026102 作者: Jiang DS; Zhang SM; Yang H; Yang H; Wang YT 收藏  |  浏览/下载:58/0  |  提交时间:2010/03/08
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| Effective-mass theory for coupled quantum dots grown on (11N)-oriented substrates 期刊论文 chinese physics, 2007, 卷号: 16, 期号: 1, 页码: 1-5 Li SS (Li Shu-Shen); Xia JB (Xia Jian-Bai) 收藏  |  浏览/下载:36/0  |  提交时间:2010/03/29
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| Asymmetric quantum-confined Stark effects of hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots 期刊论文 applied physics letters, 2005, 卷号: 87, 期号: 4, 页码: art.no.043102 Li SS; Xia JB 收藏  |  浏览/下载:76/33  |  提交时间:2010/03/17 |
| Influence of indium composition on the surface morphology of self-organized InxGa1-xAs quantum dots on GaAs substrates 期刊论文 journal of applied physics, 2000, 卷号: 87, 期号: 1, 页码: 188-191 Li HX; Zhuang QD; Wang ZG; Daniels-Race T 收藏  |  浏览/下载:46/0  |  提交时间:2010/08/12
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| Observation of defects in GaN epilayers 期刊论文 defect recognition and image processing in semiconductors 1997, 1998, 卷号: 160, 期号: 0, 页码: 347-350 Kang JY; Liu XL; Ogawa T 收藏  |  浏览/下载:32/0  |  提交时间:2010/08/12
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| Observation of defects in GaN epilayers 会议论文 7th international conference on defect recognition and image processing in semiconductors (drip-vii), templin, germany, sep 07-10, 1997 Kang JY; Liu XL; Ogawa T 收藏  |  浏览/下载:10/0  |  提交时间:2010/11/15
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| Asymmetry in the vertically aligned growth induced InAs islands in GaAs 期刊论文 chinese physics letters, 1998, 卷号: 15, 期号: 7, 页码: 519-521 作者: Xu B 收藏  |  浏览/下载:24/0  |  提交时间:2010/08/12
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