Influence of indium composition on the surface morphology of self-organized InxGa1-xAs quantum dots on GaAs substrates

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	Influence of indium composition on the surface morphology of self-organized InxGa1-xAs quantum dots on GaAs substrates
	Li HX ; Zhuang QD ; Wang ZG ; Daniels-Race T
刊名	journal of applied physics
	2000
卷号	87 期号:1 页码:188-191
关键词	MOLECULAR-BEAM-EPITAXY STRAINED ISLANDS DEPOSITION EVOLUTION MATRIX
ISSN号	0021-8979
通讯作者	li hx,duke univ,dept elect & comp engn,box 90291,durham,nc 27708 usa. 电子邮箱地址: hxli@ee.duke.edu
中文摘要	inxga1-xas self-organized quantum dots with x=1.0, 0.5, and 0.35 have been grown by molecular beam epitaxy. the areal density, distribution, and shapes have been found to be dependent on x. the dot shape changes from a round shape for x=1.0 to an elliptical shape for x less than or equal to 0.5. the major axis and minor axis of the elliptical inxga1-xas dots are along the [(1) over bar 10] and [110] directions, respectively. the ordering phenomenon is also discussed. it is suggested that the dot-dot interaction may play important roles in the self-organization process. (c) 2000 american institute of physics. [s0021-8979(00)10701-7].
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12744]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li HX,Zhuang QD,Wang ZG,et al. Influence of indium composition on the surface morphology of self-organized InxGa1-xAs quantum dots on GaAs substrates[J]. journal of applied physics,2000,87(1):188-191.
APA	Li HX,Zhuang QD,Wang ZG,&Daniels-Race T.(2000).Influence of indium composition on the surface morphology of self-organized InxGa1-xAs quantum dots on GaAs substrates.journal of applied physics,87(1),188-191.
MLA	Li HX,et al."Influence of indium composition on the surface morphology of self-organized InxGa1-xAs quantum dots on GaAs substrates".journal of applied physics 87.1(2000):188-191.