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科研机构
半导体研究所 [13]
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期刊论文 [12]
会议论文 [1]
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2012 [1]
2010 [1]
2009 [4]
2008 [1]
2007 [2]
2003 [1]
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半导体物理 [13]
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Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors
期刊论文
applied physics letters, 2012, 卷号: 100, 期号: 13, 页码: 132105
Ji, D
;
Liu, B
;
Lu, YW
;
Liu, GP
;
Zhu, QS
;
Wang, ZG
收藏
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浏览/下载:11/0
  |  
提交时间:2013/03/20
Resonant subband Landau level coupling in symmetric quantum well
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083502
Tung LC (Tung L. -C.)
;
Wu XG (Wu X. -G.)
;
Pfeiffer LN (Pfeiffer L. N.)
;
West KW (West K. W.)
;
Wang YJ (Wang Y. -J.)
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  |  
浏览/下载:29/0
  |  
提交时间:2010/12/05
TILTED MAGNETIC-FIELDS
ELECTRON-GAS
DEPOLARIZATION SHIFT
CYCLOTRON-RESONANCE
MATRIX-ELEMENTS
HETEROJUNCTIONS
SPECTROSCOPY
TECHNOLOGY
ABSORPTION
SYSTEMS
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure
期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC
;
Wang XL
;
Xiao HL
;
Ran JX
;
Wang CM
;
Ma ZY
;
Luo WJ
;
Wang ZG
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  |  
浏览/下载:193/43
  |  
提交时间:2010/03/08
CONTENT ALGAN/GAN HETEROSTRUCTURES
CHEMICAL-VAPOR-DEPOSITION
FIELD-EFFECT TRANSISTORS
AL-CONTENT
ALGAN/ALN/GAN HETEROSTRUCTURES
HEMT STRUCTURES
PHASE EPITAXY
SAPPHIRE
GAS
DENSITIES
Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations
期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: art. no. 155403
作者:
Li JB
;
Hou QF
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  |  
浏览/下载:66/11
  |  
提交时间:2010/03/08
N-TYPE GAN
ELECTRON-MOBILITY TRANSISTORS
VAPOR-PHASE EPITAXY
DEFECTS
THERMOLUMINESCENCE
CARBON
TRAP
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 5, 页码: art. no. 052101
作者:
Wei HY
;
Jiao CM
;
Song HP
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  |  
浏览/下载:235/41
  |  
提交时间:2010/03/08
aluminium compounds
conduction bands
energy gap
high electron mobility transistors
III-V semiconductors
magnesium compounds
passivation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107
作者:
Qian X
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  |  
浏览/下载:80/7
  |  
提交时间:2010/03/08
aluminium compounds
carrier lifetime
gallium arsenide
high-frequency effects
III-V semiconductors
optical Kerr effect
semiconductor heterojunctions
spin dynamics
two-dimensional electron gas
Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy
期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123
Gao, HL
;
Zeng, YP
;
Wang, BQ
;
Zhu, ZP
;
Wang, ZG
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  |  
浏览/下载:54/6
  |  
提交时间:2010/03/08
molecular beam epitaxy
semiconducting III-V materials
high electron mobility transistors
A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT
期刊论文
半导体学报, 2007, 卷号: 28, 期号: 3, 页码: 332-336
作者:
Liu Wei
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  |  
浏览/下载:11/0
  |  
提交时间:2010/11/23
Frequency mixing and phase detection functionalities of three-terminal ballistic junctions
期刊论文
nanotechnology, 2007, 卷号: 18, 期号: 19, 页码: art.no.195205
Sun J (Sun Jie)
;
Wallin D (Wallin Daniel)
;
Brusheim P (Brusheim Patrik)
;
Maximov I (Maximov Ivan)
;
Wang ZG
;
Xu HQ
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2010/03/29
CARBON NANOTUBE TRANSISTORS
Electron transport properties of MM-HEMT with varied channel indium contents
期刊论文
acta physica sinica, 2003, 卷号: 52, 期号: 11, 页码: 2879-2882
Qiu ZJ
;
Jiang CP
;
Gui YS
;
Shu XZ
;
Guo SL
;
Chu JH
;
Cui LJ
;
Zeng YP
;
Zhu ZP
;
Wang BQ
收藏
  |  
浏览/下载:252/35
  |  
提交时间:2010/08/12
MM-HEMT
Shubnikov-de Hass oscillation
MOBILITY TRANSISTORS
ALLOY SCATTERING
HIGH-PERFORMANCE
GAAS
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