A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT

	A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT
	Liu Wei
刊名	半导体学报
	2007
卷号	28 期号:3 页码:332-336
中文摘要	a technology for the monolithic integration of resonant tunneling diodes (rtds) and high electron mobility transistors (hemts) is developed. molecular beam epitaxy is used to grow an rtd on a hemt structure on gaas substrate. the rtd has a room temperature peak-to-valley ratio of 5.2:1 with a peak current density of 22.5ka/cm~2. the hemt has a 1μm gate length with a-1v threshold voltage. a logic circuit called a monostableto-bistable transition logic element (mobile) circuit is developed. the experimental result confirms that the fabricated logic circuit operates successfully with frequency operations of up to 2ghz.
学科主题	半导体物理
收录类别	CSCD
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16397]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu Wei. A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT[J]. 半导体学报,2007,28(3):332-336.
APA	Liu Wei.(2007).A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT.半导体学报,28(3),332-336.
MLA	Liu Wei."A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT".半导体学报 28.3(2007):332-336.