CORC

浏览/检索结果: 共19条,第1-10条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Ferromagnetic nature of (Ga, Cr)As epilayers revealed by magnetic circular dichroism 期刊论文
solid state communications, 2011, 卷号: 151, 期号: 6, 页码: 456-459
Wu H; Gan HD; Zheng HZ; Lu J; Zhu H; Ji Y; Li GR; Zhao JH
收藏  |  浏览/下载:64/5  |  提交时间:2011/07/05
Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 6, 页码: art. no. 064211
作者:  Wang Y;  Pan JQ
收藏  |  浏览/下载:112/0  |  提交时间:2010/03/08
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG
收藏  |  浏览/下载:193/43  |  提交时间:2010/03/08
Influence of nitridation time on the morphology of GaN nanorods synthesized by nitriding Ga2O3/ZnO films 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 117-120
Gao HY (Gao Haiyong)
收藏  |  浏览/下载:32/0  |  提交时间:2010/04/11
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 期刊论文
journal of crystal growth, 2004, 卷号: 268, 期号: 3-4, 页码: 336-341
作者:  Zhang YH;  Jiang DS
收藏  |  浏览/下载:284/63  |  提交时间:2010/03/09
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
作者:  Zhang YH;  Jiang DS
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15
Resonant tunneling of holes in GaMnAs-related double- barrier structures 会议论文
pasps conference 2002, wurzburg, germany, jul, 2002
Wu HB; Chang K; Xia JB; Peeters FM
收藏  |  浏览/下载:15/0  |  提交时间:2010/11/15
Resonant tunneling of holes in GaMnAs-related double- barrier structures 期刊论文
journal of superconductivity, 2003, 卷号: 16, 期号: 2, 页码: 279-282
Wu HB; Chang K; Xia JB; Peeters FM
收藏  |  浏览/下载:80/0  |  提交时间:2010/08/12
Optical study on the coupled GaAsSb/GaAs double quantum wells 会议论文
conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002
作者:  Jiang DS;  Zhang Y;  Zhang Y
收藏  |  浏览/下载:9/0  |  提交时间:2010/10/29
LASERS  GAIN  GAAS  
Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots 期刊论文
journal of applied physics, 2001, 卷号: 90, 期号: 4, 页码: 2048-2050
作者:  Xu B;  Ye XL
收藏  |  浏览/下载:100/6  |  提交时间:2010/08/12


©版权所有 ©2017 CSpace - Powered by CSpace