Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells
	Zhang YH; Jiang DS
刊名	journal of crystal growth
	2004
卷号	268 期号:3-4 页码:336-341
关键词	molecular beam epitaxy
ISSN号	0022-0248
通讯作者	jiang, ds, cas, inst semicond, sklsm, beijing 100083, peoples r china. 电子邮箱地址: dsjiang@red.semi.ac.cn
中文摘要	the structural and optical properties of mbe-grown gaassb/gaas multiple quantum wells (mqws) as well as strain-compensated gaassb/gaas/gaasp mqws are investigated. the results of double crystal x-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of qw structure is remarkably improved, and the mqw structure containing gaassb layers with a high sb composition can be coherently grown. due to the influence of inserted gaasp layers on the energy band and carrier distribution of qws, the optical properties of gaassb/gaas/gaasp mqws display a lot of features mainly characteristic of type-i qws despite the type-ii gaassb/gaas interfaces exist in the structure. (c) 2004 elsevier b.v. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8000]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang YH,Jiang DS. Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells[J]. journal of crystal growth,2004,268(3-4):336-341.
APA	Zhang YH,&Jiang DS.(2004).Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells.journal of crystal growth,268(3-4),336-341.
MLA	Zhang YH,et al."Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells".journal of crystal growth 268.3-4(2004):336-341.