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Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell 期刊论文
applied physics a-materials science & processing, 2011, 卷号: 103, 期号: 2, 页码: 335-341
作者:  He JF;  Li MF
收藏  |  浏览/下载：40/1  |  提交时间：2011/07/05
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:  Zhang XW;  You JB;  Yin ZG
收藏  |  浏览/下载：70/1  |  提交时间：2010/03/08
Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer 期刊论文
superlattices and microstructures, 2009, 卷号: 45, 期号: 2, 页码: 54-59
作者:  Zhang ML
收藏  |  浏览/下载：161/57  |  提交时间：2010/03/08
Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107
作者:  Qian X
收藏  |  浏览/下载：80/7  |  提交时间：2010/03/08
Neutron irradiation effect in two-dimensional electron gas of AlGaN/GaN heterostructures 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 3, 页码: 1045-1048
Zhang, ML; Wang, XL; Xiao, HL; Wang, CM; Ran, JX; Hu, GX
收藏  |  浏览/下载：50/3  |  提交时间：2010/03/08
MOCVD growth of InN using a GaN buffer 期刊论文
superlattices and microstructures, 2008, 卷号: 43, 期号: 2, 页码: 81-85
作者:  Yang H;  Wang LL;  Wang H;  Yang H;  Zhu JJ
收藏  |  浏览/下载：51/1  |  提交时间：2010/03/08
Electron irradiation induced defects in high temperature annealed InP single crystal 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 3, 页码: 1603-1607
Wang B (Wang Bo); Zhao YW (Zhao You-Wen); Dong ZY (Dong Zhi-Yuan); Deng AH (Deng Ai-Hong); Miao SS (Miao Shan-Shan); Yang J (Yang Jun)
收藏  |  浏览/下载：27/0  |  提交时间：2010/03/29
InP  
Magneto-transport characteristics of two-dimensional electron gas for Si delta-doped InAlAs/InGaAs single quantum well 期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 4, 页码: 2044-2048
Zhou WZ; Yao W; Zhu B; Qiu ZJ; Guo SL; Lin T; Cui LJ; Gui YS; Chu JH
收藏  |  浏览/下载：57/0  |  提交时间：2010/04/11
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient 期刊论文
microelectronic engineering, 2003, 卷号: 66, 期号: 1-4, 页码: 333-339
Wang QY; Wang JH; Deng HF; Lin LY
收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12
Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates 期刊论文
journal of applied physics, 2002, 卷号: 91, 期号: 4, 页码: 2429-2432
Cui LJ; Zeng YP; Wang BQ; Wu J; Zhu ZP; Lin LY
收藏  |  浏览/下载：70/6  |  提交时间：2010/08/12
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