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Origin of the failed ensemble average rule for the band gaps of disordered nonisovalent semiconductor alloys 期刊论文
physical review b, 2014, 卷号: 90, 期号: 11, 页码: 115201
Ma, J; Deng, HX; Luo, JW; Wei, SH
收藏  |  浏览/下载：23/0  |  提交时间：2015/03/25
Tunable band gaps in graphene/GaN van der Waals heterostructures 期刊论文
journal of physics-condensed matter, 2014, 卷号: 26, 期号: 29, 页码: 295304
Huang, L; Yue, Q; Kang, J; Li, Y; Li, JB
收藏  |  浏览/下载：14/0  |  提交时间：2015/03/19
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:  Li JB
收藏  |  浏览/下载：59/6  |  提交时间：2011/07/05
Native p-type transparent conductive CuI via intrinsic defects 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 5, 页码: 54907
Wang J; Li JB; Li SS
收藏  |  浏览/下载：35/0  |  提交时间：2012/01/06
First-principles study on the structural and electronic properties of ultrathin ZnO nanofilms 期刊论文
physics letters a, 374 (8): 1054-1058 feb 8 2010, 2010, 卷号: 374, 期号: 8, 页码: 1054-1058
Kang J (Kang Jun); Zhang Y (Zhang Yang); Wen YH (Wen Yu-Hua); Zheng JC (Zheng Jin-Cheng); Zhu ZZ (Zhu Zi-Zhong)
收藏  |  浏览/下载：26/0  |  提交时间：2010/04/21
The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots 期刊论文
journal of optics, 2010, 卷号: 12, 期号: 5, 页码: art. no. 055203
Huang X (Huang X.); Zhang XH (Zhang X. H.); Zhu YG (Zhu Y. G.); Li T (Li T.); Han LF (Han L. F.); Shang XJ (Shang X. J.); Ni HQ (Ni H. Q.); Niu ZC (Niu Z. C.)
收藏  |  浏览/下载：79/6  |  提交时间：2010/08/17
Quantum Confinement Effects and Electronic Properties of SnO2 Quantum Wires and Dots 期刊论文
journal of physical chemistry c, 2010, 卷号: 114, 期号: 11, 页码: 4841-4845
Deng HX (Deng Hui-Xiong); Li SS (Li Shu-Shen); Li JB (Li Jingbo)
收藏  |  浏览/下载：79/17  |  提交时间：2010/04/13
Origins of magnetism in transition metal doped Cul 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 043713
Wang J (Wang Jing); Li JB (Li Jingbo); Li SS (Li Shu-Shen)
收藏  |  浏览/下载：86/0  |  提交时间：2010/10/11
Spin states in InAs/AlSb/GaSb semiconductor quantum wells 期刊论文
physical review b, 2009, 卷号: 80, 期号: 3, 页码: art. no. 035303
作者:  Li J
收藏  |  浏览/下载：154/2  |  提交时间：2010/03/08
Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 141902
Chen YH; Li C; Zhou ZW; Lai HK; Chen SY; Ding WC; Cheng BW; Yu YD
收藏  |  浏览/下载：93/14  |  提交时间：2010/03/08

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