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科研机构
半导体研究所 [124]
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期刊论文 [122]
会议论文 [2]
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2011 [5]
2010 [9]
2009 [15]
2008 [15]
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半导体物理 [124]
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Large-scale 2D PbI2 monolayers: experimental realization and their indirect band-gap related properties
期刊论文
Nanoscale, 2017, 卷号: 9, 页码: 3736–3741
作者:
Mianzeng Zhong
;
Shuai Zhang
;
Le Huang
;
Jingbi You
;
Zhongming Wei
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  |  
浏览/下载:16/0
  |  
提交时间:2018/06/01
Effects of strain on the band gap and effective mass in two-dimensional monolayer GaX (X = S, Se, Te)
期刊论文
rsc advances, 2015, 卷号: 5, 期号: 8, 页码: 5788-5794
Le Huang
;
Zhanghui Chen
;
Jingbo Li
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  |  
浏览/下载:11/0
  |  
提交时间:2016/03/29
Indirect-to-direct band gap transition of the ZrS2 monolayer by strain: first-principles calculations
期刊论文
rsc advances, 2014, 卷号: 4, 期号: 15, 页码: 7396-7401
Li, Y
;
Kang, J
;
Li, JB
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  |  
浏览/下载:9/0
  |  
提交时间:2015/05/11
Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles
期刊论文
applied physics a, 2013, 页码: 1-7
Huihui Ren, Jikang Jian, Chu Chen, Dong Pan, Abdulezi Ablat, Yanfei Sun, Jin Li, Rong Wu
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浏览/下载:15/0
  |  
提交时间:2014/05/08
First principles study of the electronic properties of twinned SiC nanowires
期刊论文
journal of nanoparticle research, 2011, 卷号: 13, 期号: 1, 页码: 185-191
作者:
Li JB
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  |  
浏览/下载:100/6
  |  
提交时间:2011/07/05
Twinned SiC nanowires
Electronic properties
Ab initio
Modeling and simulation
SILICON-CARBIDE NANOWIRES
FIELD-EMISSION PROPERTIES
MOLECULAR-BEAM EPITAXY
INAS NANOWIRES
GROWTH
NANOTUBES
NITRIDE
DIFFUSION
NANORODS
ENERGY
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
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浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Helical Quantum States in HgTe Quantum Dots with Inverted Band Structures
期刊论文
physical review letters, 2011, 卷号: 106, 期号: 20, 页码: article no.206802
作者:
Lou WK
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  |  
浏览/下载:54/2
  |  
提交时间:2011/07/05
TOPOLOGICAL INSULATORS
WELLS
PHASE
SPINS
Native p-type transparent conductive CuI via intrinsic defects
期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 5, 页码: 54907
Wang J
;
Li JB
;
Li SS
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  |  
浏览/下载:35/0
  |  
提交时间:2012/01/06
HYBRID ELECTROCHEMICAL/CHEMICAL SYNTHESIS
AUGMENTED-WAVE METHOD
COPPER HALIDES
BAND-STRUCTURE
II-VI
SEMICONDUCTORS
EMISSION
DIAMOND
CUBR
CUCL
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D
;
Zhang R
;
Liu B
;
Xie ZL
;
Xiu XQ
;
Gu SL
;
Lu H
;
Zheng YD
;
Chen YH
;
Wang ZG
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  |  
浏览/下载:33/2
  |  
提交时间:2011/07/05
FUNDAMENTAL-BAND GAP
INDIUM NITRIDE
BUFFER LAYER
DEPENDENCE
SAPPHIRE
MOCVD
First-principles study on the structural and electronic properties of ultrathin ZnO nanofilms
期刊论文
physics letters a, 374 (8): 1054-1058 feb 8 2010, 2010, 卷号: 374, 期号: 8, 页码: 1054-1058
Kang J (Kang Jun)
;
Zhang Y (Zhang Yang)
;
Wen YH (Wen Yu-Hua)
;
Zheng JC (Zheng Jin-Cheng)
;
Zhu ZZ (Zhu Zi-Zhong)
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  |  
浏览/下载:26/0
  |  
提交时间:2010/04/21
First-principles calculations
ZnO nanofilms
Electronic properties
Quantum effects
NANOBELTS
NANORINGS
WURTZITE
ENERGY
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