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科研机构
半导体研究所 [30]
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会议论文 [30]
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2006 [6]
2004 [1]
2003 [3]
2002 [3]
2001 [4]
2000 [6]
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半导体物理 [30]
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学科主题:半导体物理
内容类型:会议论文
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Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers
会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
Fang, ZD (Fang, Zhidan)
;
Gong, M (Gong, Meng)
;
Miao, ZH (Miao, Zhenhua)
;
Niu, ZC (Niu, Zhichuan)
收藏
  |  
浏览/下载:113/32
  |  
提交时间:2010/03/29
quantum dots
photoluminescence
combination layer
1.3 MU-M
LASERS
INALAS
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors
会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
Zeng, YX (Zeng, Yuxin)
;
Liu, W (Liu, Wei)
;
Yang, FH (Yang, Fuhua)
;
Xu, P (Xu, Ping)
;
Tan, PH (Tan, Pingheng)
;
Zheng, HZ (Zheng, Houzhi)
;
Zeng, YP (Zeng, Yiping)
;
Xing, YJ (Xing, Yingjie)
;
Yu, DP (Yu, Dapeng)
收藏
  |  
浏览/下载:98/31
  |  
提交时间:2010/03/29
InAs quantum dot
photoluminescence
modulation-doped
field effect transistor
MU-M
CAPPING LAYER
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Niu, ZC
;
Zhang, SY
;
Ni, HQ
;
Wu, DH
;
He, ZH
;
Sun, Z
;
Han, Q
;
Wu, RG
收藏
  |  
浏览/下载:223/60
  |  
提交时间:2010/03/29
IMPROVED LUMINESCENCE EFFICIENCY
TEMPERATURE
PHOTOLUMINESCENCE
NITROGEN
ORIGIN
DIODES
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy
会议论文
3rd international conference on materials for advanced technologies/9th international conference on advanced materials, singapore, singapore, jul 03-08, 2005
Jiang, DS
;
Qu, YH
;
Ni, HQ
;
Wu, DH
;
Xu, YQ
;
Niu, ZC
收藏
  |  
浏览/下载:110/24
  |  
提交时间:2010/03/29
molecular beam epitaxy
Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots
会议论文
3rd asian conference on chemical vapor deposition, taipei, taiwan, nov 12-14, 2004
Kong LM
;
Cai JF
;
Wu ZY
;
Gong Z
;
Niu ZC
;
Feng ZC
收藏
  |  
浏览/下载:166/29
  |  
提交时间:2010/03/29
time-resolved photoluminescence
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
会议论文
conference on ultrafast phenomena in semiconductors and nanostructure materials x, san jose, ca, jan 23-25, 2006
Sun, Z (Sun, Z.)
;
Xu, ZY (Xu, Z. Y.)
;
Yang, XD (Yang, X. D.)
;
Sun, BQ (Sun, B. Q.)
;
Ji, Y (Ji, Y.)
;
Zhang, SY (Zhang, S. Y.)
;
Ni, HQ (Ni, H. Q.)
;
Niu, ZC (Niu, Z. C.)
收藏
  |  
浏览/下载:182/36
  |  
提交时间:2010/03/29
GaInNAs/GaAs quantum wells
optical properties
nonradiative recombination effect
time-resolved photoluminescence
PL decay dynamics
PL thermal quenching
MOLECULAR-BEAM EPITAXY
GAASN ALLOYS
EXCITATION
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
会议论文
asia-pacific optical and wireless communications conference (apoc 2003), wuhan, peoples r china, nov 04-06, 2003
Ying-Qiang X
;
Zhang W
;
Niu ZC
;
Wu RG
;
Wang QM
收藏
  |  
浏览/下载:16/1
  |  
提交时间:2010/10/29
GaNAs
SiO2 encapsulation
rapid-thermal-annealing
nitrogen reorganization
MOLECULAR-BEAM EPITAXY
OPTICAL-PROPERTIES
MU-M
Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy
会议论文
10th international conference on high pressures in semiconductor physics (hpsp-x), guildford, england, aug 05-08, 2002
Li GH
;
Fang ZL
;
Su FH
;
Ma BS
;
Ding K
;
Han HX
;
Sou IK
;
Ge WK
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
OPTICAL-ABSORPTION
ZNS-TE
TRANSITION
EDGE
Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE
会议论文
international conference on superlattices nano-structures and nano-devices (icsnn-02), toulouse, france, jul 22-26, 2002
Lan Q
;
Niu ZC
;
Zhou DY
;
Kong YC
;
Wang XD
;
Miao ZH
;
Feng SL
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2010/11/15
Optical study of localized and delocalized states in GaAsN/GaAs
会议论文
symposium on gan and related alloys held at the mrs fall meeting, boston, ma, dec 01-05, 2003
作者:
Tan PH
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/10/29
MOLECULAR-BEAM EPITAXY
ALLOYS
GAAS1-XNX
PHOTOLUMINESCENCE
RELAXATION
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