Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy

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	Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy
	Li GH ; Fang ZL ; Su FH ; Ma BS ; Ding K ; Han HX ; Sou IK ; Ge WK
	2003
会议名称	10th international conference on high pressures in semiconductor physics (hpsp-x)
会议日期	aug 05-08, 2002
会议地点	guildford, england
关键词	OPTICAL-ABSORPTION ZNS-TE TRANSITION EDGE
页码	401-406
通讯作者	li gh chinese acad sci inst semicond natl lab superlattices & microstruct pob 912 beijing 100083 peoples r china.
中文摘要	the photoluminescence from zns1-xtex alloy with 0 < x < 0.3 was investigated under hydrostatic pressure up to 7 gpa. two peaks were observed in the alloys with x < 0.01, which are related to excitons bound to isolated te isoelectronic impurities (te-1 centers) and te pairs (te-2 centers), respectively. only the te-2 related emissions were observed in the alloys with 0.01 < x < 0.03. the emissions in the alloys with 0.03 < x < 0.3 are attributed to the excitons bound to the te-n (n greater than or equal to 3) cluster centers. the pressure coefficient of the te-1 related peak is 89(4) mev/gpa, about 40% larger than that of the band gap of zns. on the other hand, the pressure coefficient of the te-2 related emissions is only 52(4) mev/gpa, about 15% smaller than that of the zns band gap. a simple koster-slater model has been used to explain the different pressure behavior of the te-1 and te-2 centers. the pressure coefficient of the te-3 centers is 62(2) mev/gpa. then the pressure coefficients of the te-n centers decrease rapidly with further increasing te composition.
英文摘要	the photoluminescence from zns1-xtex alloy with 0 < x < 0.3 was investigated under hydrostatic pressure up to 7 gpa. two peaks were observed in the alloys with x < 0.01, which are related to excitons bound to isolated te isoelectronic impurities (te-1 centers) and te pairs (te-2 centers), respectively. only the te-2 related emissions were observed in the alloys with 0.01 < x < 0.03. the emissions in the alloys with 0.03 < x < 0.3 are attributed to the excitons bound to the te-n (n greater than or equal to 3) cluster centers. the pressure coefficient of the te-1 related peak is 89(4) mev/gpa, about 40% larger than that of the band gap of zns. on the other hand, the pressure coefficient of the te-2 related emissions is only 52(4) mev/gpa, about 15% smaller than that of the zns band gap. a simple koster-slater model has been used to explain the different pressure behavior of the te-1 and te-2 centers. the pressure coefficient of the te-3 centers is 62(2) mev/gpa. then the pressure coefficients of the te-n centers decrease rapidly with further increasing te composition.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:07导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:07z (gmt). no. of bitstreams: 1 2825.pdf: 183488 bytes, checksum: 6aa5c7c42ad5a0c00b41b981efcbf0c1 (md5) previous issue date: 2003; 会议主办方: univ surrey; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; hong kong univ sci & technol, dept phys, kowloon, hong kong, peoples r china
收录类别	CPCI-S
会议主办者	会议主办方: univ surrey
会议录	physica status solidi b-basic research, 235 (2)
会议录出版者	wiley-v c h verlag gmbh ; po box 10 11 61, d-69451 weinheim, germany
会议录出版地	po box 10 11 61, d-69451 weinheim, germany
学科主题	半导体物理
语种	英语
ISSN号	0370-1972
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14861]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li GH,Fang ZL,Su FH,et al. Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy[C]. 见:10th international conference on high pressures in semiconductor physics (hpsp-x). guildford, england. aug 05-08, 2002.