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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体物理    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures 会议论文 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 作者:  Han PD 收藏  |  浏览/下载：16/0  |  提交时间：2010/10/29 AlGaN/GaN heterostructures  In-doping  2DEG  electron sheet density  X-ray diffraction  etching  CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  PHASE EPITAXY  MOBILITY  GROWTH  FILMS   Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes 会议论文 11th international semiconducting and insulating materials conference (simc-xi), canberra, australia, jul 03-07, 2000 Lu LW; Zhang YH; Xu ZT; Xu ZY; Wang ZG; Wang J; Ge WK 收藏  |  浏览/下载：5/0  |  提交时间：2010/11/15 InP-based optoelectronic devices for optical fiber communications 会议论文 1st czech-chinese workshop on advanced materials for optoelectronics (amfo 98), prague, czech republic, jun 15-17, 1998 Luo Y; Chen LH; Li TN 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15 FEEDBACK SEMICONDUCTOR-LASERS   High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method 会议论文 semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998 Ma XY; Cao Q; Wang ST; Guo L; Wang ZM; Wang LM; He GP; Yang YL; Zhang HQ; Zhou XN; Chen LH 收藏  |  浏览/下载：13/0  |  提交时间：2010/10/29 InGaAsP  strained layer quantum well  laser diode  MOCVD   Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs 会议论文 semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998 Yang GW; Xu ZT; Xu JY; Ma XY; Zhang JM; Chen LH 收藏  |  浏览/下载：8/0  |  提交时间：2010/10/29 strained quantum well  semiconductor lasers