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科研机构
半导体研究所 [10]
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会议论文 [10]
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2010 [1]
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半导体物理 [10]
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学科主题:半导体物理
内容类型:会议论文
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Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As
会议论文
international magnetics conference (intermag), madrid, spain, may 04-08, 2008
作者:
Gan HD
收藏
  |  
浏览/下载:65/0
  |  
提交时间:2010/03/09
Magnetic analysis
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy
会议论文
3rd international conference on materials for advanced technologies/9th international conference on advanced materials, singapore, singapore, jul 03-08, 2005
Jiang, DS
;
Qu, YH
;
Ni, HQ
;
Wu, DH
;
Xu, YQ
;
Niu, ZC
收藏
  |  
浏览/下载:110/24
  |  
提交时间:2010/03/29
molecular beam epitaxy
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects
会议论文
17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005
Zhao, YW
;
Dong, ZY
收藏
  |  
浏览/下载:220/68
  |  
提交时间:2010/03/29
ENCAPSULATED CZOCHRALSKI INP
SEMICONDUCTOR COMPOUND-CRYSTALS
STIMULATED CURRENT SPECTROSCOPY
CURRENT TRANSIENT SPECTROSCOPY
DEEP-LEVEL DEFECTS
ANNEALING AMBIENT
POINT-DEFECTS
FE
PHOSPHIDE
DONORS
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
会议论文
asia-pacific optical and wireless communications conference (apoc 2003), wuhan, peoples r china, nov 04-06, 2003
Ying-Qiang X
;
Zhang W
;
Niu ZC
;
Wu RG
;
Wang QM
收藏
  |  
浏览/下载:16/1
  |  
提交时间:2010/10/29
GaNAs
SiO2 encapsulation
rapid-thermal-annealing
nitrogen reorganization
MOLECULAR-BEAM EPITAXY
OPTICAL-PROPERTIES
MU-M
Optical study of localized and delocalized states in GaAsN/GaAs
会议论文
symposium on gan and related alloys held at the mrs fall meeting, boston, ma, dec 01-05, 2003
作者:
Tan PH
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/10/29
MOLECULAR-BEAM EPITAXY
ALLOYS
GAAS1-XNX
PHOTOLUMINESCENCE
RELAXATION
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells
会议论文
international workshop on nitride semiconductors (iwn 2002), aachen, germany, jul 22-25, 2002
作者:
Jiang DS
收藏
  |  
浏览/下载:16/2
  |  
提交时间:2010/10/29
LUMINESCENCE
LOCALIZATION
Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes
会议论文
11th international semiconducting and insulating materials conference (simc-xi), canberra, australia, jul 03-07, 2000
Lu LW
;
Zhang YH
;
Xu ZT
;
Xu ZY
;
Wang ZG
;
Wang J
;
Ge WK
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2010/11/15
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)
会议论文
2nd international conference on radiation effects on semiconductor materials, detectors and devices, florence, italy, mar 04-06, 1998
Li Z
;
Dezilllie B
;
Eremin V
;
Li CJ
;
Verbitskaya E
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
strip detectors
silicon detectors
annealing
simulation
irradiation
N-EFF
JUNCTION DETECTORS
RADIATION-DAMAGE
MODELS
Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)
会议论文
14th latin american symposiumm on solid state physics, oaxaca, mexico, jan 11-16, 1998
Zou LF
;
Acosta-Ortiz SE
;
Zou LX
;
Regalado LE
;
Sun DZ
;
Wang ZG
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2010/11/15
ELECTRICAL-PROPERTIES
ION-IMPLANTATION
REGROWTH
SILICON
LAYERS
The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix
会议论文
10th international conference on superlattices, microstructures and microdevices, lincoln, nebraska, jul 08-11, 1997
Wang ZM
;
Feng SL
;
Lu ZD
;
Zhao Q
;
Yang XP
;
Chen ZG
;
Xu ZY
;
Zheng HZ
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
GROWTH
INTERDIFFUSION
ISLANDS
SCALE
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