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科研机构
半导体研究所 [35]
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会议论文 [35]
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2010 [1]
2009 [1]
2006 [8]
2004 [1]
2003 [3]
2002 [3]
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半导体物理 [35]
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学科主题:半导体物理
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Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As
会议论文
international magnetics conference (intermag), madrid, spain, may 04-08, 2008
作者:
Gan HD
收藏
  |  
浏览/下载:65/0
  |  
提交时间:2010/03/09
Magnetic analysis
Tunneling magnetoresistance in (Ga,Mn)As/Al-O/CoFeB hybrid structures
会议论文
53rd annual conference on magnetism and magnetic materials, austin, tx, nov 11-14, 2008
Du GX
;
Babu MR
;
Han XF
;
Deng JJ
;
Wang WZ
;
Zhao JH
;
Wang WD
;
Tang JK
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2010/03/09
SPIN INJECTION
Surface morphology evolution of strained InAs/GaAs(331)a films
会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
Gong, M (Gong, Meng)
;
Fang, ZD (Fang, Zhidan)
;
Miao, ZH (Miao, Zhenhua)
;
Niu, ZC (Niu, Zhichuan)
收藏
  |  
浏览/下载:118/36
  |  
提交时间:2010/03/29
surface morphology evolution
InAs nanostructures
island-pit pairs
MOLECULAR-BEAM EPITAXY
QUANTUM DOTS
COOPERATIVE NUCLEATION
HETEROEPITAXY
TRANSITION
ISLANDS
GROWTH
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors
会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
Zeng, YX (Zeng, Yuxin)
;
Liu, W (Liu, Wei)
;
Yang, FH (Yang, Fuhua)
;
Xu, P (Xu, Ping)
;
Tan, PH (Tan, Pingheng)
;
Zheng, HZ (Zheng, Houzhi)
;
Zeng, YP (Zeng, Yiping)
;
Xing, YJ (Xing, Yingjie)
;
Yu, DP (Yu, Dapeng)
收藏
  |  
浏览/下载:98/31
  |  
提交时间:2010/03/29
InAs quantum dot
photoluminescence
modulation-doped
field effect transistor
MU-M
CAPPING LAYER
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Niu, ZC
;
Zhang, SY
;
Ni, HQ
;
Wu, DH
;
He, ZH
;
Sun, Z
;
Han, Q
;
Wu, RG
收藏
  |  
浏览/下载:223/60
  |  
提交时间:2010/03/29
IMPROVED LUMINESCENCE EFFICIENCY
TEMPERATURE
PHOTOLUMINESCENCE
NITROGEN
ORIGIN
DIODES
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy
会议论文
3rd international conference on materials for advanced technologies/9th international conference on advanced materials, singapore, singapore, jul 03-08, 2005
Jiang, DS
;
Qu, YH
;
Ni, HQ
;
Wu, DH
;
Xu, YQ
;
Niu, ZC
收藏
  |  
浏览/下载:110/24
  |  
提交时间:2010/03/29
molecular beam epitaxy
Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires
会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
Miao, ZH (Miao, Zhenhua)
;
Gong, Z (Gong, Zheng)
;
Fang, ZD (Fang, Zhidan)
;
Niu, ZC (Niu, Zhichuan)
收藏
  |  
浏览/下载:82/21
  |  
提交时间:2010/03/29
atomic hydrogen
molecular beam epitaxy
step arrays
MOLECULAR-BEAM EPITAXY
ATOMIC-HYDROGEN
VICINAL SURFACE
QUANTUM DOTS
GROWTH
TEMPERATURE
IRRADIATION
MECHANISM
MBE
A novel fast lock-in phase-locked loop frequency synthesizer with direct frequency presetting circuit
会议论文
international conference on solid state devices and materials (, kobe, japan, sep 13-15, 2005
Kuang, XF
;
Wu, NJ
;
Shou, GL
收藏
  |  
浏览/下载:165/14
  |  
提交时间:2010/03/29
lock-in speed
Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots
会议论文
3rd asian conference on chemical vapor deposition, taipei, taiwan, nov 12-14, 2004
Kong LM
;
Cai JF
;
Wu ZY
;
Gong Z
;
Niu ZC
;
Feng ZC
收藏
  |  
浏览/下载:166/29
  |  
提交时间:2010/03/29
time-resolved photoluminescence
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
会议论文
conference on ultrafast phenomena in semiconductors and nanostructure materials x, san jose, ca, jan 23-25, 2006
Sun, Z (Sun, Z.)
;
Xu, ZY (Xu, Z. Y.)
;
Yang, XD (Yang, X. D.)
;
Sun, BQ (Sun, B. Q.)
;
Ji, Y (Ji, Y.)
;
Zhang, SY (Zhang, S. Y.)
;
Ni, HQ (Ni, H. Q.)
;
Niu, ZC (Niu, Z. C.)
收藏
  |  
浏览/下载:182/36
  |  
提交时间:2010/03/29
GaInNAs/GaAs quantum wells
optical properties
nonradiative recombination effect
time-resolved photoluminescence
PL decay dynamics
PL thermal quenching
MOLECULAR-BEAM EPITAXY
GAASN ALLOYS
EXCITATION
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