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Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 会议论文
Chen J; Fan WJ; Xu Q; Zhang XW; Li SS; Xia JB
收藏  |  浏览/下载:45/0  |  提交时间:2010/03/09
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; He, ZH; Sun, Z; Han, Q; Wu, RG
收藏  |  浏览/下载:223/60  |  提交时间:2010/03/29
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well 会议论文
asia-pacific optical and wireless communications conference (apoc 2003), wuhan, peoples r china, nov 04-06, 2003
Ying-Qiang X; Zhang W; Niu ZC; Wu RG; Wang QM
收藏  |  浏览/下载:16/1  |  提交时间:2010/10/29
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells 会议论文
international workshop on nitride semiconductors (iwn 2002), aachen, germany, jul 22-25, 2002
作者:  Jiang DS
收藏  |  浏览/下载:16/2  |  提交时间:2010/10/29
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
作者:  Jiang DS
收藏  |  浏览/下载:10/0  |  提交时间:2010/11/15
Optical transitions in GaNAs/GaAs single quantum well 会议论文
international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000
Luo XD; Xu ZY; Sun BQ; Pan Z; Li LH; Lin YW; Ge WK
收藏  |  浏览/下载:17/0  |  提交时间:2010/10/29


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