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Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Duan RF
收藏  |  浏览/下载：87/4  |  提交时间：2011/07/05
Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 11, 页码: art. no. 117104
Hao GD (Hao Guo-Dong); Chen YH (Chen Yong-Hai); Fan YM (Fan Ya-Ming); Huang XH (Huang Xiao-Hui); Wang HB (Wang Huai-Bing)
收藏  |  浏览/下载：12/0  |  提交时间：2010/12/28
InN layers grown by MOCVD on SrTiO3 substrates 期刊论文
journal of crystal growth, 312 (3): jan 15 2010, 2010, 卷号: 312, 期号: 3, 页码: 373-377
作者:  Jia CH;  Zhou XL
收藏  |  浏览/下载：116/26  |  提交时间：2010/04/13
Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire 期刊论文
journal of the electrochemical society, 2010, 卷号: 157, 期号: 7, 页码: h721-h726
Wei TB (Wei T. B.); Hu Q (Hu Q.); Duan RF (Duan R. F.); Wei XC (Wei X. C.); Yang JK (Yang J. K.); Wang JX (Wang J. X.); Zeng YP (Zeng Y. P.); Wang GH (Wang G. H.); Li JM (Li J. M.)
收藏  |  浏览/下载：293/52  |  提交时间：2010/06/18
Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy 期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 17, 页码: 4153-4157
作者:  Wei TB;  Wei XC;  Duan RF
收藏  |  浏览/下载：84/6  |  提交时间：2010/03/08
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 会议论文
international wuhan symposium on advanced electron microscopy (iwsaem), wuhan, peoples r china, oct 17-21, 2003
Luo XH; Wang RM; Zhang XP; Zhang HZ; Yu DP; Luo MC
收藏  |  浏览/下载：18/1  |  提交时间：2010/10/29
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
作者:  Han PD
收藏  |  浏览/下载：83/1  |  提交时间：2010/10/29
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Qu B; Zheng XH; Wang YT; Xu DP; Lin SM; Yang H; Liang JW
收藏  |  浏览/下载：23/0  |  提交时间：2010/11/15
The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition 会议论文
1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999
Sun XL; Wang YY; Yang H; Li JB; Zheng LX; Xu DP; Wang ZG
收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15
Self-organization of wire-like InAs nanostructures on InP 期刊论文
journal of crystal growth, 1999, 卷号: 205, 期号: 4, 页码: 613-617
Li HX; Zhuang QD; Kong XW; Wang ZG; Daniels-Race T
收藏  |  浏览/下载：43/0  |  提交时间：2010/08/12

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