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High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers 期刊论文
Chinese Physics B, 2013, 卷号: 22, 期号: 9, 页码: 094208
Xu Yun, Wang Yong-Bin, Zhang Yu,Song Guo-Feng and Chen Liang-Hui
收藏  |  浏览/下载：39/0  |  提交时间：2014/04/09
MBE growth of 2.3m InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers 期刊论文
key engineering materials, 2013, 卷号: 552, 页码: 389-392
Zhang, Tiancheng; Ni, Qinfei; Liu, Xuezhen; Yu, Bin; Wang, Yuxia; Zhang, Yu; Ma, Xunpeng; Wang, Yongbin; Xu, Yun
收藏  |  浏览/下载：12/0  |  提交时间：2014/04/28
Ultrashort Pulse Generation at Quasi-40-GHz by Using a Two-Section Passively Mode-Locked InGaAsP-InP Tensile Strained Quantum-Well Laser 期刊论文
chinese physics letters, 2012, 卷号: 29, 期号: 2, 页码: 24201
Kong, DH; Zhu, HL; Liang, S; Qiu, JF; Zhao, LJ
收藏  |  浏览/下载：9/0  |  提交时间：2013/03/17
Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 7, 页码: 77301
Wang M; Gu YX; Ji HM; Yang T; Wang ZG
收藏  |  浏览/下载：15/0  |  提交时间：2012/02/06
EPITAXY  MOVPE  
IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES 期刊论文
international journal of modern physics b, 2010, 卷号: 24, 期号: 27, 页码: 5439-5450
作者:  Hao GD
收藏  |  浏览/下载：49/5  |  提交时间：2011/07/05
Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well 期刊论文
journal of crystal growth, 2006, 卷号: 287, 期号: 1, 页码: 28-33
Fan WJ; Abiyasa AP; Tan ST; Yu SF; Sun XW; Xia JB; Yeo YC; Li MF; Chong TC
收藏  |  浏览/下载：99/0  |  提交时间：2010/04/11
The structural and photoluminescence character of InAs quantum dots grown on a combined InAlAs and GaAs strained buffer 期刊论文
pricm 5: the fifth pacific rim international conference on advanced materials and processing, 2005, 卷号: pts 1-5, 期号: 475-479, 页码: 1791-1794
Shi, GX; Xu, B; Jin, P; Ye, XL; Cui, CX; Zhang, CL; Wu, J; Wang, ZG
收藏  |  浏览/下载：24/0  |  提交时间：2010/03/17
Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 9, 页码: 1688-1691
作者:  Wang Wei;  Pan Jiaoqing;  Wang Wei
收藏  |  浏览/下载：32/0  |  提交时间：2010/11/23
Effect of misfit dislocation originated from strained layer on photoluminescence properties of InxGa1-xN/GaN multiple quantum wells 期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 4, 页码: 971-974
作者:  Li DB
收藏  |  浏览/下载：25/0  |  提交时间：2010/03/17
Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate 期刊论文
journal of crystal growth, 2000, 卷号: 219, 期号: 1-2, 页码: 17-21
作者:  Ye XL;  Xu B
收藏  |  浏览/下载：35/0  |  提交时间：2010/08/12

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