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| Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots 期刊论文 solid state communications, 2006, 卷号: 137, 期号: 11, 页码: 606-610 作者: Jin P ; Xu B![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:100/0  |  提交时间:2010/04/11
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| Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers 会议论文 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 Kang JY; Shen YW; Wang ZG
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:15/0  |  提交时间:2010/11/15
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| Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers 期刊论文 materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 303-307 Kang JY; Shen YW; Wang ZG
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:90/4  |  提交时间:2010/08/12
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| Influence of precipitates on GaN epilayer quality 期刊论文 materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 75, 期号: 2-3, 页码: 214-217 Kang JY; Huang QS; Wang ZG
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:47/0  |  提交时间:2010/08/12
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| Influence of precipitates on GaN epilayer quality 会议论文 iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999 Kang JY; Huang QS; Wang ZG
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15
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| Mechanism on exciton-mediated energy transfer in erbium-doped silicon 会议论文 international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99), beijing, peoples r china, jun 13-18, 1999 Lei HB; Yang QQ; Ou HY; Wang QM
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:18/0  |  提交时间:2010/11/15
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| Mechanism on exciton-mediated energy transfer in erbium-doped silicon 期刊论文 optical materials, 2000, 卷号: 14, 期号: 3, 页码: 255-258 Lei HB; Yang QQ; Ou HY; Wang QM
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:48/0  |  提交时间:2010/08/12
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| A study of the interface of CeO2/Si heterostructure grown by ion beam deposition 期刊论文 vacuum, 1998, 卷号: 51, 期号: 3, 页码: 397-401 Wu ZL; Huang DD; Yang XZ
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:38/0  |  提交时间:2010/08/12
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| Donor acceptor pair in molecular beam epitaxy grown GaN 期刊论文 materials science and engineering b-solid state materials for advanced technology, 1997, 卷号: 43, 期号: 0, 页码: 242-245 Ren GB; Dewsnip DJ; Lacklison DE; Orton JW; Cheng TS; Foxon CT
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:11/0  |  提交时间:2010/11/17
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