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科研机构
半导体研究所 [24]
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期刊论文 [19]
会议论文 [5]
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2011 [1]
2009 [1]
2008 [2]
2007 [2]
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2005 [2]
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半导体材料 [24]
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Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED
期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B
;
Li ZC
;
Yao R
;
Liang M
;
Yan FW
;
Wang GH
收藏
  |  
浏览/下载:93/5
  |  
提交时间:2011/07/05
GaN-based
LED
Al composition
electron blocking layer
TEMPERATURE
ALLOYS
MOVPE
A mini-staged multi-stacked quantum cascade laser for improved optical and thermal performance
期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 7, 页码: art. no. 075023
作者:
Li L
收藏
  |  
浏览/下载:81/4
  |  
提交时间:2010/03/08
ROOM-TEMPERATURE
High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)
期刊论文
science in china series e-technological sciences, 2008, 卷号: 51, 期号: 4, 页码: 371-377
Zhou, BQ
;
Zhu, MF
;
Liu, FZ
;
Liu, JL
;
Zhou, YQ
;
Li, GH
;
Ding, K
收藏
  |  
浏览/下载:45/5
  |  
提交时间:2010/03/08
radio-frequency plasma enhanced chemical vapor deposition (rf-PECVD)
microcrystalline silicon film
high rate deposition
Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale
期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 1, 页码: art. no. 014314
Gao, HY
;
Yan, FW
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
收藏
  |  
浏览/下载:75/3
  |  
提交时间:2010/03/08
GAN-BASED LEDS
EFFICIENCY
FABRICATION
IMPROVEMENT
OVERGROWTH
Effect of growth conditions on the GaN thin film by sputtering deposition
期刊论文
journal of crystal growth, 2007, 卷号: 299, 期号: 2, 页码: 268-271
Zhang CG
;
Bian LF
;
Chen WD
;
Hsu CC
收藏
  |  
浏览/下载:61/0
  |  
提交时间:2010/03/29
phase equilibria
Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy
期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 12, 页码: 3543-3546
Wu, BP
;
Wu, DH
;
Ni, HQ
;
Huang, SS
;
Zhan, F
;
Xiong, YH
;
Xu, YQ
;
Niu, ZC
收藏
  |  
浏览/下载:44/1
  |  
提交时间:2010/03/08
LAYERS
SURFACTANT
SUBSTRATE
HEMT
SB
Recent research results on deep level defects in semi-insulating InP - Application to improve material quality
会议论文
12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006
Zhao, YW (Zhao, Youwen)
;
Dong, ZY (Dong, Zhiyuan)
;
Dong, HW (Dong, Hongwei)
;
Sun, NF (Sun, Niefeng)
;
Sun, TN (Sun, Tongnian)
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  |  
浏览/下载:61/12
  |  
提交时间:2010/03/29
STIMULATED CURRENT SPECTROSCOPY
CURRENT TRANSIENT SPECTROSCOPY
FE-DOPED INP
POINT-DEFECTS
COMPENSATION
TEMPERATURE
DONORS
TRAPS
Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power
期刊论文
solid-state electronics, 2005, 卷号: 49, 期号: 12, 页码: 1961-1964
Liu JQ
;
Liu FQ
;
Lu XZ
;
Guo Y
;
Wang ZG
收藏
  |  
浏览/下载:298/3
  |  
提交时间:2010/04/11
X-ray diffraction
molecular beam epitaxy
semiconducting gallium compounds
quantum-cascade lasers (QCLs)
UNIPOLAR SEMICONDUCTOR-LASERS
MU-M
OPERATION
Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates
期刊论文
solid-state electronics, 2005, 卷号: 49, 期号: 8, 页码: 1387-1390
Wang XL
;
Wang CM
;
Hu GX
;
Wang JX
;
Chen TS
;
Jiao G
;
Li JP
;
Zeng YP
;
Li JM
收藏
  |  
浏览/下载:94/18
  |  
提交时间:2010/03/17
HEMT
Realization of quantum cascade laser operating at room temperature
期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 285-289
作者:
Jin P
;
Li CM
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/08/12
crystal structure
lattice-mismatch
microsctucture
radiation
X-ray diffraction
molecular beam epitaxy
infrared devices
quantum cascade laser
MU-M
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