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| Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation–dissolution–regrowth method 期刊论文
中国物理B, 2017, 卷号: 26, 期号: 6, 页码: 068102
杨冠卿; 张世著; 徐波; 陈涌海; 王占国
  收藏 | 浏览/下载：55/0 | 提交时间：2017/05/23
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| Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 2, 页码: article no.27801
作者: Xu B
收藏 | 浏览/下载：51/3 | 提交时间：2011/07/05
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| Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者: Xu B; Zhou GY; Ye XL; Zhang HY
收藏 | 浏览/下载：53/5 | 提交时间：2011/07/05
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| Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者: Duan RF
收藏 | 浏览/下载：83/4 | 提交时间：2011/07/05
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| The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者: Song HP; Shi K; Sang L; Wei HY
收藏 | 浏览/下载：58/3 | 提交时间：2011/07/05
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| Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏 | 浏览/下载：53/10 | 提交时间：2011/07/05
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| Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
作者: Jin P
收藏 | 浏览/下载：53/4 | 提交时间：2011/07/07
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| Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102
Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Jia CH (Jia C. H.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.)
收藏 | 浏览/下载：18/0 | 提交时间：2010/12/12
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| Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan)
收藏 | 浏览/下载：41/0 | 提交时间：2010/12/28
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| Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073111
Ding Y (Ding Y.); Fan WJ (Fan W. J.); Ma BS (Ma B. S.); Xu DW (Xu D. W.); Yoon SF (Yoon S. F.); Liang S (Liang S.); Zhao LJ (Zhao L. J.); Wasiak M (Wasiak M.); Czyszanowski T (Czyszanowski T.); Nakwaski W (Nakwaski W.)
收藏 | 浏览/下载：31/0 | 提交时间：2010/11/14
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