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科研机构
半导体研究所 [39]
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期刊论文 [35]
会议论文 [4]
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2013 [1]
2011 [8]
2010 [3]
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半导体材料 [39]
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Chaos synchronization of two light-emitting diode systems with complex dynamics via adaptive neural control
期刊论文
applied mechanics and materials, 2013, 卷号: 344, 页码: 170-173
Han, Chun Xiao
;
Li, Xiao Qin
;
Yang, Ting Ting
;
Li, Rui Xue
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2014/05/16
Optical and electrical characteristics of GaN vertical light emitting diode with current block layer
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 64007
Guo, Enqing
;
Liu, Zhiqiang
;
Wang, Liancheng
;
Yi, Xiaoyan
;
Wang, Guohong
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/06/14
Drops
Efficiency
Electric contactors
Gallium nitride
Light emission
Ohmic contacts
Silica
High-power quantum dot superluminescent diode with integrated optical amplifier section
期刊论文
electronics letters, 2011, 卷号: 47, 期号: 21, 页码: 1191-
Wang, ZC
;
Jin, P
;
Lv, XQ
;
Li, XK
;
Wang, ZG
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2012/02/06
LIGHT-EMITTING-DIODES
SPECTRUM
Electrical characteristics of a vertical light emitting diode with N-type contacts on a selectively wet-etching roughened surface
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 2, 页码: 24009
Wang, Liancheng
;
Guo, Enqing
;
Liu, Zhiqiang
;
Yi, Xiaoyan
;
Wang, Guohong
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2012/06/14
Gallium nitride
Leakage currents
Light emission
Light emitting diodes
Metallizing
Polarization
Testing
Water analysis
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED
期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B
;
Li ZC
;
Yao R
;
Liang M
;
Yan FW
;
Wang GH
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  |  
浏览/下载:93/5
  |  
提交时间:2011/07/05
GaN-based
LED
Al composition
electron blocking layer
TEMPERATURE
ALLOYS
MOVPE
Comparison of as-grown and annealed GaN/InGaN:Mg samples
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101
Deng QW
;
Wang XL
;
Xiao HL
;
Wang CM
;
Yin HB
;
Chen H
;
Lin DF
;
Jiang LJ
;
Feng C
;
Li JM
;
Wang ZG
;
Hou X
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2012/01/06
LIGHT-EMITTING-DIODES
VAPOR-PHASE EPITAXY
BAND-GAP
MG
PHOTOLUMINESCENCE
INGAN
DEPENDENCE
STRAIN
ENERGY
INN
Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment
期刊论文
physica status solidi-rapid research letters, 2011, 卷号: 5, 期号: 2, 页码: 74-76
作者:
You JB
;
Zhang XW
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  |  
浏览/下载:49/4
  |  
提交时间:2011/07/05
ZnO
LED
electroluminescence
hydrogen-plasma treatment
Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate
期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 6, 页码: article no.68502
Wu M
;
Zeng YP
;
Wang JX
;
Hu Q
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  |  
浏览/下载:49/2
  |  
提交时间:2011/07/05
LIGHT-EMITTING-DIODES
ULTRAVIOLET
GROWTH
Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202
作者:
Jin P
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  |  
浏览/下载:43/4
  |  
提交时间:2011/07/15
LIGHT-EMITTING-DIODES
OPTICAL-PROPERTIES
TUNING RANGE
NM
EMISSION
SPECTRUM
SPECTROSCOPY
Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 11, 页码: art. no. 117104
Hao GD (Hao Guo-Dong)
;
Chen YH (Chen Yong-Hai)
;
Fan YM (Fan Ya-Ming)
;
Huang XH (Huang Xiao-Hui)
;
Wang HB (Wang Huai-Bing)
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/12/28
LIGHT-EMITTING-DIODES
WURTZITE SEMICONDUCTORS
QUANTUM-WELLS
MATRIX-ELEMENTS
SEMIPOLAR
SAPPHIRE
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