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科研机构
半导体研究所 [9]
内容类型
会议论文 [9]
发表日期
2004 [9]
学科主题
半导体材料 [9]
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Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Zhao, YW
;
Dong, ZY
;
Zhang, YH
;
Li, CJ
收藏
  |  
浏览/下载:177/52
  |  
提交时间:2010/03/29
DEEP-LEVEL DEFECTS
FE-DOPED INP
GROWN INP
SPECTROSCOPY
RESONANCE
WAFER
Growth and characterization of 4H-SiC by horizontal hot-wall CVD
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Sun, GS
;
Gao, X
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:134/34
  |  
提交时间:2010/03/29
CHEMICAL-VAPOR-DEPOSITION
Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Gao, X
;
Li, JM
;
Sun, GS
;
Zhang, NH
;
Wang, L
;
Zhao, WS
;
Zeng, YP
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  |  
浏览/下载:135/48
  |  
提交时间:2010/03/29
SI(111)
ALN
Raman scattering study on diluted magnetic semiconductor Ga1-xMnxAs prepared by Mn-ion implantation
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Islam MR
;
Chen NF
;
Yamada M
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  |  
浏览/下载:130/33
  |  
提交时间:2010/03/29
Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
作者:
Jin P
;
Xu B
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  |  
浏览/下载:127/16
  |  
提交时间:2010/03/29
QUANTUM DOTS
Micro-fabricated Al0.3Ga0.7As pyramids for potential SPM applications
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Sun, J
;
Hu, LZ
;
Sun, YC
;
Wang, ZY
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  |  
浏览/下载:59/0
  |  
提交时间:2010/03/29
GROWTH
Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
作者:
Xu B
;
Ye XL
;
Jin P
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  |  
浏览/下载:92/22
  |  
提交时间:2010/03/29
DOTS
Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001)
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Wang YL
;
Wu J
;
Chen YH
;
Wang ZG
;
Zeng YP
收藏
  |  
浏览/下载:125/17
  |  
提交时间:2010/03/29
LAYER-ORDERING ORIENTATION
Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
作者:
Xu B
;
Jin P
;
Ye XL
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  |  
浏览/下载:82/12
  |  
提交时间:2010/03/29
1.3 MU-M
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