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CORC

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Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy 期刊论文
journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
Zhao J (Zhao Jie); Zeng YP (Zeng Yiping); Liu C (Liu Chao); Li YB (Li Yanbo)
收藏  |  浏览/下载：148/33  |  提交时间：2010/06/04
Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films 期刊论文
diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376
Ying J (Ying J.); Zhang XW (Zhang X. W.); Fan YM (Fan Y. M.); Tan HR (Tan H. R.); Yin ZG (Yin Z. G.)
收藏  |  浏览/下载：27/0  |  提交时间：2010/12/28
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP
收藏  |  浏览/下载：40/0  |  提交时间：2010/03/09
P-doped p-type ZnO films deposited on Si substrate by radio-frequency magnetron sputtering 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 15, 页码: art.no.152102
作者:  Yin ZG
收藏  |  浏览/下载：34/0  |  提交时间：2010/04/11
Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN 期刊论文
science in china series e-technological sciences, 2003, 卷号: 46, 期号: 6, 页码: 620-626
作者:  Zhang SM
收藏  |  浏览/下载：252/65  |  提交时间：2010/08/12
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates 会议论文
international conference on material for advanced technologies, singapore, singapore, jul 01-06, 2001
Xie MH; Cheung SH; Zheng LX; Tong SY; Zhang BS; Yang H
收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15
Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 4, 页码: 489-493
Gao F; Huang DD; Li JP; Kong MY; Sun DZ; Li JM; Zeng YP; Lin LY
收藏  |  浏览/下载：149/5  |  提交时间：2010/08/12
Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE 期刊论文
journal of crystal growth, 2001, 卷号: 222, 期号: 1-2, 页码: 110-117
Xu HZ; Takahashi K; Wang CX; Wang ZG; Okada Y; Kawabe M; Harrison I; Foxon CT
收藏  |  浏览/下载：54/0  |  提交时间：2010/08/12
X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures 期刊论文
journal of crystal growth, 2000, 卷号: 217, 期号: 1-2, 页码: 26-32
Pan Z; Wang YT; Li LH; Zhang W; Lin YW; Zhou ZQ; Wu RH
收藏  |  浏览/下载：48/0  |  提交时间：2010/08/12
Growth and characterization of strained superlattices delta-GaNxAs1-x/GaAs by molecular beam epitaxy 期刊论文
journal of crystal growth, 2000, 卷号: 209, 期号: 4, 页码: 648-652
Pan Z; Li LH; Lin YW; Zhou ZQ; Zhang W; Wang YT; Wu RH
收藏  |  浏览/下载：60/0  |  提交时间：2010/08/12

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