Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy

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	Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy
	Gao F ; Huang DD ; Li JP ; Kong MY ; Sun DZ ; Li JM ; Zeng YP ; Lin LY
刊名	journal of crystal growth
	2001
卷号	223 期号:4 页码:489-493
关键词	molecular beam epitaxy semiconducting gegermanium semiconducting silicon bipolar transistors heterojunction semiconductor devices POWER
ISSN号	0022-0248
通讯作者	gao f,chinese acad sci,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	n-p-n si/sige/si heterostructure has been grown by a disilane (si2h6) gas and ge solid sources molecular beam epitaxy system using phosphine (ph3) and diborane (b2h6) as n- and p-type in situ doping sources, respectively. x-ray diffraction (xrd) and secondary ion mass spectroscopy (sims) measurements show that the grown heterostructure has a good quality, the boron doping is confined to the sige base layer, and the ge has a trapezoidal profile. postgrowth p implantation was performed to prepare a good ohmic contact to the emitter. heterojunction bipolar transistor (hbt) has been fabricated using the grown heterostructure and a common-emitter current gain of 75 and a cut-off frequency of 20 ghz at 300 k have been obtained. (c) 2001 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12258]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Gao F,Huang DD,Li JP,et al. Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy[J]. journal of crystal growth,2001,223(4):489-493.
APA	Gao F.,Huang DD.,Li JP.,Kong MY.,Sun DZ.,...&Lin LY.(2001).Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy.journal of crystal growth,223(4),489-493.
MLA	Gao F,et al."Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy".journal of crystal growth 223.4(2001):489-493.