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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文 journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7 Dong ZY; Zhao YW; Zeng YP; Duan ML; Sun WR; Jiao JH; Lin LY 收藏  |  浏览/下载：351/16  |  提交时间：2010/08/12 annealing  defects  etching  semiconducting indium phosphide  FE-DOPED INP  SEMIINSULATING INP  INDIUM-PHOSPHIDE  DEFECTS  DIFFUSION  CRYSTALS  WAFERS   Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 376-380 Zheng LX; Xie MH; Xu SJ; Cheung SH; Tong SY 收藏  |  浏览/下载：81/5  |  提交时间：2010/08/12 surface processes  molecular beam epitaxy  nitrides  semiconducting gallium compounds  GAN(0001) SURFACES  RECONSTRUCTIONS   Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Zheng LX; Xie MH; Xu SJ; Cheung SH; Tong SY 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 surface processes  molecular beam epitaxy  nitrides  semiconducting gallium compounds  GAN(0001) SURFACES  RECONSTRUCTIONS   Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions 期刊论文 journal of crystal growth, 2000, 卷号: 213, 期号: 1-2, 页码: 40-50 Hayakawa Y; Okano Y; Hirata A; Imaishi N; Kumagiri Y; Zhong X; Xie X; Yuan B; Wu F; Liu H; Yamaguchi T; Kumagawa M 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 microgravity  Chinese recoverable satellite  GaSb  InxGa1-xSb  dissolution  recrystallization  orientation  FLOATING-ZONE GROWTH  INXGA1-XSB CRYSTALS  GASB  MELT  INSB  DIFFUSION  SILICON  CONVECTION  STRIATION   Effect of rapid thermal annealing on InGaAs/GaAs quantum wells 期刊论文 journal of crystal growth, 2000, 卷号: 212, 期号: 1-2, 页码: 352-355 Zhuang QD; Li JM; Zeng YP; Yoon SF; Zheng HQ; Kong MY; Lin LY 收藏  |  浏览/下载：61/0  |  提交时间：2010/08/12 annealing  InGaAs/GaAs  quantum wells  interdiffusion  quantum dots  MBE  DOT SUPERLATTICE   Annealing behavior of InAs/GaAs quantum dot structures 期刊论文 journal of electronic materials, 1998, 卷号: 27, 期号: 2, 页码: 59-61 Wang ZM; Feng SL; Lu ZD; Zhao Q; Yang XP; Chen ZG; Xu ZY; Zheng HZ 收藏  |  浏览/下载：43/0  |  提交时间：2010/08/12 annealing  InAs/GaAs  quantum dots  BOX ISLANDS  GAAS  INTERDIFFUSION  GAAS(100)  GROWTH  THRESHOLD  INGAAS  STRAIN  SCALE  OPTICAL-PROPERTIES