CORC

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CORC

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Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism 期刊论文
acta physica sinica, 2010, 卷号: 59, 期号: 2, 页码: 1169-1174
Peng YC (Peng Ying-Cai); Fan ZD (Fan Zhi-Dong); Bai ZH (Bai Zhen-Hua); Ma L (Ma Lei)
收藏  |  浏览/下载：140/29  |  提交时间：2010/04/21
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP
收藏  |  浏览/下载：40/0  |  提交时间：2010/03/09
Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 9, 页码: 151-154
作者:  Li Yan
收藏  |  浏览/下载：15/0  |  提交时间：2010/11/23
Epitaxial growth on 4H-SiC by TCS as a silicon precursor 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 9, 页码: 21-25
作者:  Liu Xingfang
收藏  |  浏览/下载：30/0  |  提交时间：2010/11/23
Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Yin, HB; Wang, XL; Hu, GX; Ran, JX; Xiao, HL; Li, JM
收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD
收藏  |  浏览/下载：66/3  |  提交时间：2010/03/08
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Ji, G; Sun, GS; Ning, J; Liu, XF; Zhao, YM; Wang, L; Zhao, WS; Zeng, YP
收藏  |  浏览/下载：35/0  |  提交时间：2010/03/09
Structural and Optical Performance of GaN Thick Film Grown by HVPE 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 1, 页码: 19-23
作者:  Duan Ruifei;  Liu Zhe;  Duan Ruifei;  Wei Tongbo
收藏  |  浏览/下载：10/0  |  提交时间：2010/11/23
Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1315-1319
Zhou WM; Wang CY; Chen YH; Wang ZG
收藏  |  浏览/下载：47/0  |  提交时间：2010/04/11
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX; Wang, XL; Hu, GX; Li, JP; Wang, JX; Wang, CM; Zeng, YP; Li, JM
收藏  |  浏览/下载：167/71  |  提交时间：2010/03/29
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