Epitaxial growth on 4H-SiC by TCS as a silicon precursor

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	Epitaxial growth on 4H-SiC by TCS as a silicon precursor
	Liu Xingfang
刊名	半导体学报
	2009
卷号	30 期号:9 页码:21-25
中文摘要	epitaxial growth on n-type 4h-sic 8°off-oriented substrates with a size of 10 × 10 mm~2 at different tem-peratures with various gas flow rates has been performed in a horizontal hot wall cvd reactor, using trichlorosilane (tcs) as a silicon precursor source together with ethylene as a carbon precursor source. the growth rate reached 23 μm/h and the optimal epilayer was obtained at 1600 ℃ with a tcs flow rate of 12 sccm in c/si of 0.42, which has a good surface morphology with a low rms of 0.64 nm in an area of 10 × 10μm~2. the homoepitaxial layer was oh-tained at 1500 ℃ with low growth rate (< 5μm/h) and the 3c-sic epilayers were obtained at 1650 ℃ with a growth rate of 60-70μm/h. it is estimated that the structural properties of the epilayers have a relationship with the growth temperature and growth rate. silicon droplets with different sizes are observed on the surface of the homoepitaxial layer in a low c/si ratio of 0.32.
学科主题	半导体材料
收录类别	CSCD
资助信息	the national basic research program of china,the national natural science foundation of china
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15719]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu Xingfang. Epitaxial growth on 4H-SiC by TCS as a silicon precursor[J]. 半导体学报,2009,30(9):21-25.
APA	Liu Xingfang.(2009).Epitaxial growth on 4H-SiC by TCS as a silicon precursor.半导体学报,30(9),21-25.
MLA	Liu Xingfang."Epitaxial growth on 4H-SiC by TCS as a silicon precursor".半导体学报 30.9(2009):21-25.