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科研机构
半导体研究所 [43]
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期刊论文 [38]
会议论文 [5]
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2016 [1]
2012 [1]
2011 [3]
2010 [7]
2009 [2]
2008 [3]
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半导体材料 [43]
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Spin transport in undoped InGaAs/AlGaAs multiple quantum well studied via spin photocurrent excited by circularly polarized light
期刊论文
nanoscale research letters, 2016, 卷号: 11, 期号: 1
Laipan Zhu
;
Yu Liu
;
Wei Huang
;
Xudong Qin
;
Yuan Li
;
QingWu
;
Yonghai Chen
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2017/03/10
Reduced linewidth enhancement factor due to excited state transition of quantum dot lasers
期刊论文
optics letters, 2012, 卷号: 37, 期号: 8, 页码: 1298-1300
Xu, PF
;
Ji, HM
;
Xiao, JL
;
Gu, YX
;
Huang, YZ
;
Yang, T
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  |  
浏览/下载:17/0
  |  
提交时间:2013/03/17
Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 6, 页码: article no.64320
作者:
Yang T
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  |  
浏览/下载:53/5
  |  
提交时间:2011/07/05
PHOTOLUMINESCENCE
EMISSION
INALAS
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H
;
Zhou K
;
Pang JB
;
Shao YD
;
Wang Z
;
Zhao YW
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  |  
浏览/下载:52/10
  |  
提交时间:2011/07/05
UNDOPED GALLIUM ANTIMONIDE
SELF-DIFFUSION
NATIVE DEFECTS
N-TYPE
CRYSTALS
CATHODOLUMINESCENCE
PHOTOLUMINESCENCE
SEMICONDUCTORS
SPECTROSCOPY
LUMINESCENCE
Abnormal temperature dependent photoluminescence of excited states of InAs/GaAs quantum dots: Carrier exchange between excited states and ground states
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 11, 页码: 113540
Zhou, X.L.
;
Chen, Y.H.
;
Ye, X.L.
;
Xu, Bo
;
Wang, Z.G.
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  |  
浏览/下载:17/0
  |  
提交时间:2012/06/14
Ground state
Photoluminescence
Quantum efficiency
Semiconductor quantum dots
Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: art. no. 171101
Cao YL (Cao Yu-Lian)
;
Yang T (Yang Tao)
;
Xu PF (Xu Peng-Fei)
;
Ji HM (Ji Hai-Ming)
;
Gu YX (Gu Yong-Xian)
;
Wang XD (Wang Xiao-Dong)
;
Wang Q (Wang Qing)
;
Ma WQ (Ma Wen-Quan)
;
Chen LH (Chen Liang-Hui)
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  |  
浏览/下载:221/51
  |  
提交时间:2010/05/24
excited states
gallium arsenide
III-V semiconductors
indium compounds
laser tuning
optical films
quantum dot lasers
silicon compounds
tantalum compounds
TEMPERATURE-DEPENDENCE
THRESHOLD
PERFORMANCE
GAIN
Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods
期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 543-546
Li ZW
;
Xu XQ
;
Wang J
;
Liu JM
;
Liu XL
;
Yang SY
;
Zhu QS
;
Wang ZG
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  |  
浏览/下载:67/8
  |  
提交时间:2011/07/05
IONIZED-IMPURITY-SCATTERING
COMPOSITIONAL INHOMOGENEITY
PHASE-SEPARATION
QUANTUM-WELLS
ALLOY
CATHODOLUMINESCENCE
HETEROSTRUCTURES
SEMICONDUCTORS
TRANSPORT
MOBILITY
Broadband external cavity tunable quantum dot lasers with low injection current density
期刊论文
optics express, 2010, 卷号: 18, 期号: 9, 页码: 8916-8922
作者:
收藏
  |  
浏览/下载:171/44
  |  
提交时间:2010/05/24
LIGHT-EMITTING-DIODES
NM TUNING RANGE
SUPERLUMINESCENT DIODES
WELL LASER
EMISSION
SPECTROSCOPY
SPECTRUM
Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073111
Ding Y (Ding Y.)
;
Fan WJ (Fan W. J.)
;
Ma BS (Ma B. S.)
;
Xu DW (Xu D. W.)
;
Yoon SF (Yoon S. F.)
;
Liang S (Liang S.)
;
Zhao LJ (Zhao L. J.)
;
Wasiak M (Wasiak M.)
;
Czyszanowski T (Czyszanowski T.)
;
Nakwaski W (Nakwaski W.)
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/11/14
VAPOR-PHASE EPITAXY
PHOTOVOLTAGE SPECTROSCOPY
PHOTOLUMINESCENCE
MODES
Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-mu m InAs-GaAs Quantum-Dot Lasers
期刊论文
japanese journal of applied physics, 2010, 卷号: 49, 期号: 7, 页码: art. no. 072103
Ji HM (Ji Hai-Ming)
;
Yang T (Yang Tao)
;
Cao YL (Cao Yu-Lian)
;
Xu PF (Xu Peng-Fei)
;
Gu YX (Gu Yong-Xian)
;
Wang ZG (Wang Zhan-Guo)
收藏
  |  
浏览/下载:88/11
  |  
提交时间:2010/08/17
DEPENDENCE
WELL
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