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| Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301 作者: Jin P ; Wei HY ; Song HP![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:311/47  |  提交时间:2010/03/08
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| Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107 Zhang BL; Sun GS; Guo Y; Zhang PF; Zhang RQ; Fan HB; Liu XL; Yang SY; Zhu QS; Wang ZG
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:233/42  |  提交时间:2010/03/08
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| Optical properties of phase-separated GaN1-xPx alloys grown by light-radiation heating metal-organic chemical vapour deposition 期刊论文 chinese physics letters, 2005, 卷号: 22, 期号: 8, 页码: 2081-2083 Lu LW; Chen TJ; Shen B; Wang JN; Ge WK
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:66/32  |  提交时间:2010/03/17
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| Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers 会议论文 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 Kang JY; Shen YW; Wang ZG
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:15/0  |  提交时间:2010/11/15
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| Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers 期刊论文 materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 303-307 Kang JY; Shen YW; Wang ZG
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:90/4  |  提交时间:2010/08/12
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| Influence of strain on annealing effects of In(Ga)As quantum dots 期刊论文 journal of crystal growth, 2002, 卷号: 244, 期号: 2, 页码: 136-141 作者: Xu B![](/image/person.jpg)
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| Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer 期刊论文 journal of crystal growth, 2001, 卷号: 231, 期号: 4, 页码: 520-524 Cao X; Zeng YP; Kong MY; Pan LA; Wang BQ; Zhu ZP; Wang XG; Chang Y; Chu JH
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:135/8  |  提交时间:2010/08/12
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| Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells 会议论文 40th electronic materials conference (emc-40), charlottesville, virginia, jun 24-26, 1998 作者: Zhang JY ; Jiang DS![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:20/0  |  提交时间:2010/11/15
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| Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers 期刊论文 journal of electronic materials, 1999, 卷号: 28, 期号: 5, 页码: 503-505 Zhuang QD; Li JM; Zeng YP; Pan L; Chen YH; Kong MY; Lin LY
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:24/0  |  提交时间:2010/08/12
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| Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells 期刊论文 journal of electronic materials, 1999, 卷号: 28, 期号: 5, 页码: 563-566 作者: Zhang JY ; Jiang DS![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
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