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Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs 期刊论文
semiconductor science and technology, 2016, 卷号: 31, 期号: 12, 页码: 125003
Wei Li; Quan Wang; Xiangmi Zhan; Junda Yan; Lijuan Jiang; Haibo Yin; Jiamin Gong; Xiaoliang Wang; Fengqi Liu; Baiquan Li; Zhanguo Wang
收藏  |  浏览/下载：18/0  |  提交时间：2017/03/10
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN_AlN_GaN heterostructure field-effect transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang , Lin Zhao-Jun, Lü Yuan-Jie, Luan Chong-Biao and Wang Zhan-Guo
收藏  |  浏览/下载：29/0  |  提交时间：2014/03/18
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang; Lin Zhao-Jun; Lu Yuan-Jie; Luan Chong-Biao; Wang Zhan-Guo
收藏  |  浏览/下载：28/0  |  提交时间：2013/09/17
Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
nanoscale research letters, 2012, 卷号: 7, 页码: 434
Lv YJ (Lv, Yuanjie); Lin ZJ (Lin, Zhaojun); Meng LG (Meng, Lingguo); Luan CB (Luan, Chongbiao); Cao ZF (Cao, Zhifang); Yu YX (Yu, Yingxia); Feng ZH (Feng, Zhihong); Wang ZG (Wang, Zhanguo)
收藏  |  浏览/下载：15/0  |  提交时间：2013/04/02
Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 12, 页码: article no.123512
Lv YJ; Lin ZJ; Zhang Y; Meng LG; Luan CB; Cao ZF; Chen H; Wang ZG
收藏  |  浏览/下载：67/9  |  提交时间：2011/07/05
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Zhang ML;  Hou QF
收藏  |  浏览/下载：129/30  |  提交时间：2010/03/08
Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 10, 页码: 10-12
作者:  Zhang Yu
收藏  |  浏览/下载：15/0  |  提交时间：2010/11/23
Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111
Luo, WJ; Wang, XL; Xiao, HL; Wang, CM; Ran, JX; Guo, LC; Li, JP; Liu, HX; Chen, YL; Yang, FH; Li, JM
收藏  |  浏览/下载：44/0  |  提交时间：2010/03/08
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:  Hou QF;  Zhang ML
收藏  |  浏览/下载：51/0  |  提交时间：2010/03/09
A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 9, 页码: 1654-1656
作者:  Zhang Yang;  Zhang Renping
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/23

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