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科研机构
半导体研究所 [37]
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期刊论文 [30]
会议论文 [7]
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2011 [5]
2009 [4]
2008 [5]
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半导体材料 [37]
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Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure
期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:
Wang C
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  |  
浏览/下载:69/3
  |  
提交时间:2011/07/05
Hydrogenated nanocrystalline silicon
Buffer layer
i/p interface
Solar cells
OPEN-CIRCUIT VOLTAGE
A-SI-H
P/I-INTERFACE
MICROCRYSTALLINE SILICON
VAPOR-DEPOSITION
FILMS
CAPACITANCE
EFFICIENCY
CRYSTALLINE
TEMPERATURE
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD
期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:
Song HP
;
Shi K
;
Sang L
;
Wei HY
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  |  
浏览/下载:58/3
  |  
提交时间:2011/07/05
Metal organic chemical vapor deposition
Sapphire
Zinc compounds
Semiconducting II-VI materials
VAPOR-PHASE EPITAXY
OPTICAL-PROPERTIES
ZNO NANORODS
RAMAN-SCATTERING
M-PLANE
FILMS
PHOTOLUMINESCENCE
DEPOSITION
NANOWIRES
FIELDS
Electrodepostied polyaniline films decorated with nano-islands: Characterization and application as anode buffer layers in solar cells
期刊论文
solar energy materials and solar cells, 2011, 卷号: 95, 期号: 2, 页码: 440-445
作者:
Liu K
;
Tan FR
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  |  
浏览/下载:87/5
  |  
提交时间:2011/07/05
Polyaniline
Electrodeposition
Thin films
Buffer layers
Solar cells
PHOTOVOLTAIC CELLS
POLYMER
NANOWIRES
EFFICIENCY
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED
期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B
;
Li ZC
;
Yao R
;
Liang M
;
Yan FW
;
Wang GH
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  |  
浏览/下载:93/5
  |  
提交时间:2011/07/05
GaN-based
LED
Al composition
electron blocking layer
TEMPERATURE
ALLOYS
MOVPE
Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition
期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 24, 页码: 241111
Zhang, L
;
Wei, XC
;
Liu, NX
;
Lu, HX
;
Zeng, JP
;
Wang, JX
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2012/02/06
ALGAN/GAN HETEROSTRUCTURES
TRANSPORT-PROPERTIES
Temperature dependent spectral response characteristic of III-V compound tandem cell
期刊论文
chinese science bulletin, 2009, 卷号: 54, 期号: 3, 页码: 353-357
作者:
Wang Y
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  |  
浏览/下载:411/35
  |  
提交时间:2010/03/08
spectral response
tandem cell
temperature coefficient
High efficiency passively Q-switched mode-locking Nd:GdVO4 laser with LT-In0.25Ga0.75As saturable absorber
期刊论文
optical materials, 2009, 卷号: 31, 期号: 8, 页码: 1215-1217
Pan SD
;
Zhao LN
;
Yuan Y
;
Zhu SN
;
He JL
;
Wang YG
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  |  
浏览/下载:104/2
  |  
提交时间:2010/03/08
Semiconductor saturable absorber
Q-switch
Mode lock
Nd:GdVO4
Structural and optical properties of ZnO films on SrTiO3 substrates by MOCVD
期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 1, 页码: art. no. 015415
作者:
Jia CH
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  |  
浏览/下载:173/14
  |  
提交时间:2010/03/08
PULSED-LASER DEPOSITION
THIN-FILMS
ZINC-OXIDE
PHOTOLUMINESCENCE
TEMPERATURE
SAPPHIRE
SURFACE
GROWTH
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application
期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:
Zhang ML
;
Hou QF
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  |  
浏览/下载:129/30
  |  
提交时间:2010/03/08
AlGaN/AlN/GaN
HEMT
MOCVD
SiC substrate
Power device
Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale
期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 1, 页码: art. no. 014314
Gao, HY
;
Yan, FW
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
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  |  
浏览/下载:75/3
  |  
提交时间:2010/03/08
GAN-BASED LEDS
EFFICIENCY
FABRICATION
IMPROVEMENT
OVERGROWTH
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