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Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者:  Jin P;  Ye XL;  Zhou XL
收藏  |  浏览/下载：50/4  |  提交时间：2011/07/05
The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083513
Zhou GY (Zhou G. Y.); Chen YH (Chen Y. H.); Tang CG (Tang C. G.); Liang LY (Liang L. Y.); Jin P (Jin P.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：13/0  |  提交时间：2010/12/05
Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:  Xu B;  Jin P
收藏  |  浏览/下载：37/0  |  提交时间：2010/03/09
INAS  
Carrier channels of multimodal-sized quantum dots: A surface-mediated adatom migration picture 期刊论文
physical review b, 2007, 卷号: 76, 期号: 12, 页码: art.no.125404
Ding F (Ding Fei); Chen YH; Tang CG; Xu B (Xu Bo); Wang ZG
收藏  |  浏览/下载：35/0  |  提交时间：2010/03/29
Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 7, 页码: art.no.071903
作者:  Jin P
收藏  |  浏览/下载：549/12  |  提交时间：2010/04/11
GROWTH  INAS  GAAS  SURFACES  
Evolution of wetting layer in InAs/GaAs quantum dot system 期刊论文
nanoscale research letters, 2006, 卷号: 1, 期号: 1, 页码: 79-83
Chen YH (Chen Y. H.); Ye XL (Ye X. L.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：59/0  |  提交时间：2010/04/11
Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 9, 页码: 2207-2211
作者:  Jin P;  Ye XL
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers 期刊论文
journal of crystal growth, 2000, 卷号: 210, 期号: 4, 页码: 451-457
作者:  Ye XL;  Xu B
收藏  |  浏览/下载：52/0  |  提交时间：2010/08/12
Effects of growth interruption on self-assembled InAs/GaAs islands 期刊论文
journal of crystal growth, 1998, 卷号: 192, 期号: 1-2, 页码: 97-101
作者:  Han PD
收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12

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