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High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy 期刊论文
optics express, 2015, 卷号: 23, 期号: 7, 页码: 8383-8388
S. Luo; H.M. Ji; F. Gao; F. Xu; X.G. Yang; P. Liang; T. Yang
收藏  |  浏览/下载：21/0  |  提交时间：2016/03/22
The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy 期刊论文
journal of crystal growth, 2014, 卷号: 396, 页码: 33-37
Du, WN; Yang, XG; Wang, XY; Pan, HY; Ji, HM; Luo, S; Yang, T; Wang, ZG
收藏  |  浏览/下载：21/0  |  提交时间：2015/04/02
Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor phase epitaxy 期刊论文
rsc advances, 2014, 卷号: 4, 期号: 97, 页码: 54902-54906
Kong, SS; Wei, HY; Yang, SY; Li, HJ; Feng, YX; Chen, Z; Liu, XL; Wang, LS; Wang, ZG
收藏  |  浏览/下载：21/0  |  提交时间：2015/03/20
Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres 期刊论文
materials letters, 2012, 卷号: 68, 页码: 327-330
Wei, TB; Chen, Y; Hu, Q; Yang, JK; Huo, ZQ; Duan, RF; Wang, JX; Zeng, YP; Li, JM; Liao, YX; Yin, FT
收藏  |  浏览/下载：20/0  |  提交时间：2013/03/17
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:  Song HP;  Wei HY;  Li CM;  Jiao CM
收藏  |  浏览/下载：66/4  |  提交时间：2011/07/05
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  Jia CH;  Song HP
收藏  |  浏览/下载：118/2  |  提交时间：2011/07/05
Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010
作者:  Yang T;  Yang XG;  Wang KF
收藏  |  浏览/下载：63/2  |  提交时间：2011/07/05
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL; Chen YH; Jiang CY; Liu Y; Ma H
收藏  |  浏览/下载：36/4  |  提交时间：2011/07/05
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Duan RF
收藏  |  浏览/下载：80/4  |  提交时间：2011/07/05

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